IXYS IXFX52N60Q2

Advance Technical Information
HiPerFETTM
Power MOSFETs
Q2-Class
IXFK52N60Q2
IXFX52N60Q2
VDSS
ID25
= 600V
= 52A
Ω
≤ 115mΩ
≤ 250ns
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
600
600
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
52
208
A
A
IA
EAS
TC = 25°C
TC = 25°C
52
4
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
735
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Md
Mounting torque
(IXFK)
1.13/10
Nm/lb.in.
FC
Mounting force
(IXFX)
20..120 /4.5..27
N/lb.
Weight
TO-264
PLUS247
10
6
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
600
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION,All rights reserved
TJ = 125°C
V
5.5
V
± 200
nA
25
3
μA
mA
115
mΩ
G
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Double metal process for low gate
resistance
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
DS98982B(05/08)
IXFK52N60Q2
IXFX52N60Q2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS= 10V, ID = 0.5 • ID25, Note 1
30
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
TO-264 (IXFK) Outline
40
S
6800
pF
1000
pF
225
pF
Crss
td(on)
Resistive Switching Times
23
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
13
ns
td(off)
RG = 1Ω (External)
56
ns
tf
8.5
ns
Qg(on)
198
nC
43
nC
94
nC
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.17 °C/W
RthJC
RthCS
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
0.15
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
52
A
Repetitive, pulse width limited by TJM
208
A
IF = IS, VGS = 0V, Note 1
1.5
V
250
ns
μC
A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1
10
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2