Advance Technical Information HiPerFETTM Power MOSFETs Q2-Class IXFK52N60Q2 IXFX52N60Q2 VDSS ID25 = 600V = 52A Ω ≤ 115mΩ ≤ 250ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 52 208 A A IA EAS TC = 25°C TC = 25°C 52 4 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb. Weight TO-264 PLUS247 10 6 g g Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved TJ = 125°C V 5.5 V ± 200 nA 25 3 μA mA 115 mΩ G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density DS98982B(05/08) IXFK52N60Q2 IXFX52N60Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264 (IXFK) Outline 40 S 6800 pF 1000 pF 225 pF Crss td(on) Resistive Switching Times 23 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 13 ns td(off) RG = 1Ω (External) 56 ns tf 8.5 ns Qg(on) 198 nC 43 nC 94 nC Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.17 °C/W RthJC RthCS Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM °C/W 0.15 Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 52 A Repetitive, pulse width limited by TJM 208 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns μC A IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 10 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2