Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 800 V = 7 A ≤ 0.93 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous Transient 800 800 V V ± 30 ± 40 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 7 36 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 6 30 1.0 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 120 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 2500 °C °C V~ 11..65/2.5..15 N/lb 2 g TJ TJM Tstg TL TSOLD VISOL 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab FC Mounting Force Weight Symbol Test Conditions (TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 2.5 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT, (Note 1) Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C V 5.5 V ±100 nA 25 750 µA µA 0.93 mΩ ISOPLUS220TM (IXFC) E153432 G D S G = Gate S = Source Isolated back surface D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly: no screws, or isolation foils required z Space savings z High power density z Low collector capacitance to ground (low EMI) DS99603E(07/06) IXFC 12N80P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = IT, pulse test 12 Ciss Coss 18 S 2800 pF 210 pF 19 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 21 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 22 ns td(off) RG = 10 Ω (External) 62 ns tf 22 ns Qg(on) 51 nC 13 nC 19 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT Qgd ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.05 ° C/W RthJC RthCS ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive 36 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IRM IF = 12 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 250 QRM 7 ns A 0.7 µC Ref: IXYS CO 0177 R0 Note 1: Test Current IT = 6 A ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537