IXTH62N65X2 - IXYS Corporation

Advance Technical Information
IXTH62N65X2
X2-Class
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
= 650V
= 62A
 52m

TO-247
G
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
650
V
VDGR
TJ = 25C to 150C, RGS = 1M
650
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
62
A
IDM
TC = 25C, Pulse Width Limited by TJM
124
A
IA
TC = 25C
20
A
TC = 25C
1.2
J
dv/dt
IS  IDM, VDD  VDSS, TJ  150°C
50
V/ns
PD
TC = 25C
780
W
-55 ... +150
C

TJM
150
C

Tstg
-55 ... +150
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
6
g
S
G = Gate
S = Source
EAS
TJ
D
D (Tab)
D
= Drain
Tab = Drain
Features


International Standard Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages



High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
650
VGS(th)
VDS = VGS, ID = 4mA
2.5
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1

V


4.5
V
100 nA
TJ = 125C
© 2015 IXYS CORPORATION, All Rights Reserved


Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
25 A
750 A
52 m
DS100679(8/15)
IXTH62N65X2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
RGi
Characteristic Values
Min.
Typ.
Max
VDS = 10V, ID = 0.5 • ID25, Note 1
25
42
Gate Input Resistance
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Qg(on)
Qgs
S
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
D
A
A2
A2
5940
pF
3730
pF
1.2
pF
29
ns
18
ns
65
ns
5
ns
104
nC
26
nC
31
nC
A
+ 0K M D B M
0P O
B
E
Q
+
R

1.0
Ciss
Coss
TO-247 (IXTH) Outline
S
D2
+
D1
D
0P1
1
2
3
4
ixys option
L1
C
E1
L
A1
c
b
b2
b4
e
+ J M C AM
O
PINS: 1 - Gate
2, 4 - Drain
3 - Source
0.16 C/W
RthJC
RthCS
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max
62
A
Repetitive, Pulse Width Limited by TJM
248
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 31A, -di/dt = 100A/μs
420
6.3
30
VR = 100V
ns
μC
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2