IXYS FMM22-05PF

Advance Technical Information
PolarHVTM HiPerFET
N-Channel Power MOSFET
Phase Leg Topology
FMM22-05PF
3
3
VDSS
ID25
T1
55
RDS(on)
trr(max)
=
=
≤
≤
500V
13A
Ω
270mΩ
200ns
4
4
T2
ISOPLUS i4-PakTM
1
1
22
Symbol
Test Conditions
TJ
TJM
Tstg
Maximum Ratings
-55 ... +150
150
-55 ... +150
°C
°C
°C
VISOLD
50/60HZ, RMS, t = 1min, leads-to-tab
2500
~V
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
FC
Mounting force
20..120 / 4.5..27
N/lb.
1
Isolated Tab
5
Features
z
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
TC = 25°C
13
A
IDM
TC = 25°C, pulse width limited by TJM
55
A
IA
TC = 25°C
22
A
EAS
TC = 25°C
750
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
132
W
z
z
z
z
Advantages
z
z
z
z
z
CP
dS ,dA
dS ,dA
Test Conditions
Weight
© 2008 IXYS CORPORATION, All rights reserved
z
Characteristic Values
Min.
Typ.
Max.
Coupling capacitance between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
Applications
z
Symbol
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low QG
Low Drain-to-Tab capacitance
Low package inductance
40
z
pF
z
z
z
1.7
5.5
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
mm
mm
9
g
DS100039(09/08)
FMM22-05PF
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = ±30 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 11A, Note 1
gfs
VDS = 20V, ID = 11A, Note 1
V
5.0
V
± 100
nA
5 μA
250 μA
TJ = 125°C
270 mΩ
Ciss
Coss
20
S
2630
pF
310
pF
27
pF
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
Resistive Switching Times
22
ns
tr
VGS = 10V, VDS = 0.5 z VDSS, ID = 22A
25
ns
td(off)
RG = 10Ω (External)
72
ns
tf
21
ns
Qg(on)
50
nC
16
nC
18
nC
Qgs
VGS= 10V, VDS = 0.5
z
VDSS, ID = 11A
Qgd
RthCS
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions3
IS
VGS = 0V
13
A
ISM
Repetitive, pulse width limited by TJM
55
A
VSD
IF = 22A, VGS = 0V, Note 1
1.5
V
200
ns
IRM
QRM
Ref: IXYS CO 0077 R0
0.95 °C/W
RthJC
trr
ISOPLUS i4-PakTM Outline
IF = 22A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
7.0
A
0.7
μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2