IXYS IXFT60N20F

Advance Technical Information
IXFH60N20F
IXFT60N20F
HiPerRFTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
200V
60A
Ω
38mΩ
200ns
TO-247
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
200
V
VGSS
Continuous
± 20
V
VGSM
Transient
± 30
V
ID25
TC = 25°C
60
A
IDM
TC = 25°C, pulse width limited by TJM
240
A
IA
TC = 25°C
60
A
EAS
TC = 25°C
1.5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
320
W
-55 ... +150
°C
TJM
150
°C
Features
Tstg
-55 ... +150
°C
z
TJ
TAB
TO-268
G
S
TAB
G = Gate
S = Source
z
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
z
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
z
Weight
TO-247
TO-268
6
4
g
g
z
z
D
= Drain
TAB = Drain
International standard packages
Avalanche Rated
RF capable MOSFETs
Double metal process for low gate
resistnace
Low package inductance
Fast intrinsic diode
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 1mA
200
VGS(th)
VDS = VGS, ID = 4mA
3.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION, All rights reserved
z
z
Easy to mount
Space savings
High power density
V
5.0
V
± 100
nA
50 μA
1.5 mA
38
mΩ
Applications:
z
z
z
z
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC-DC Converters
Laser Drivers
13.5 Mhz industrial applications
Pulse generation
DS98885A(11/08)
IXFH60N20F
IXFT60N20F
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
18
VDS = 10V, ID = 0.5 • ID25, Note 1
TO-247 (IXFH) Outline
26
S
2930
pF
940
pF
Crss
320
pF
td(on)
15
ns
14
ns
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
tr
Resistive Switching Times
td(off)
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
42
ns
tf
RG = 2Ω (External)
7.0
ns
100
nC
25
nC
46
nC
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.39 °C/W
RthJC
RthCS
°C/W
(TO-247)
0.25
Source-Drain Diode
TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
60
A
ISM
Repetitive, pulse width limited by TJM
240
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 25A, -di/dt = 100A/μs
200 ns
QRM
IRM
VR = 100V, VGS = 0V
0.8
μC
10
A
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2