HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) IXFK 60N55Q2 IXFX 60N55Q2 Q-Class = = = 550 V 60 A Ω 88 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 550 550 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 60 240 60 A A A EAR EAS TC = 25°C TC = 25°C 75 4.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 735 W TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight 0.9/6 Nm/lb.in. PLUS-247 TO-264 D (TAB) D TO-264 AA (IXFK) G °C 300 TO-264 G °C °C °C -55 ... +150 150 -55 ... +150 TJ TJM Tstg PLUS 247TM (IXFX) 6 10 G = Gate S = Source D D (TAB) S D = Drain TAB = Drain g g Features z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 550 VGS(th) VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.5 V ±200 nA 50 2 µA mA 88 mΩ z z z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z Easy to mount Space savings High power density DS98984B(04/04) IXFK 60N55Q2 IXFX 60N55Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 44 S 7300 pF 1150 pF 340 pF td(on) 22 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14 ns td(off) RG = 1.0 Ω (External), 57 ns 9 ns 200 nC 42 nC 100 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.17 TO-264 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.15 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 A Repetitive; pulse width limited by TJM 240 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A 1 10 IF = 25A, -di/dt = 100 A/µs, VR = 100 V PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFK 60N55Q2 IXFX 60N55Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25º C 140 60 VGS = 10V VGS = 10V 8V 100 40 I D - Amperes I D - Amperes 120 8V 7V 50 30 6V 20 7V 80 60 6V 40 5V 10 20 0 5V 0 0 1 2 3 4 5 6 0 2 4 6 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 10 12 14 16 18 20 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 60 3.1 VGS = 10V 2.8 R D S ( o n ) - Normalized 8V 7V 50 I D - Amperes 8 V D S - Volts 40 6V 30 20 5V VGS = 10V 2.5 2.2 1.9 I D = 60A 1.6 I D = 30A 1.3 1 10 0.7 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V D S - Volts Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs. ID 2.8 VGS = 10V 2.4 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 70 60 TJ = 125ºC 50 2.2 I D - Amperes R D S ( o n ) - Normalized 2.6 0 TJ - Degrees Centigrade 2 1.8 1.6 1.4 40 30 20 1.2 10 TJ = 25ºC 1 0 0.8 0 20 40 60 80 I D - Amperes © 2004 IXYS All rights reserved 100 120 140 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 60N55Q2 IXFX 60N55Q2 Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 80 90 70 TJ = -40ºC 60 70 g f s - Siemens I D - Amperes 80 60 50 40 TJ = 125ºC 30 40 30 20 25ºC -40ºC 20 25ºC 125ºC 50 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 10 20 30 V G S - Volts 180 10 160 9 140 8 I D = 30A 7 I G = 10mA 120 100 80 TJ = 125ºC 60 70 80 90 100 VDS = 275V 6 5 4 3 40 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 20 40 V S D - Volts 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 C iss R DS(on) Limit I D - Amperes Capacitance - picoFarads 50 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 40 I D - Amperes 1000 C oss 100 25µs 100µs 1ms 10ms 10 TJ = 150ºC C rss DC TC = 25ºC f = 1MHz 100 1 0 5 10 15 20 25 30 35 40 10 100 V D S - Volts 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFK 60N55Q2 IXFX 60N55Q2 Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000 10000