HiPerRF TM Power MOSFETs IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A Ω RDS(on) = 85 mΩ F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 55 220 55 A A A EAR EAS TC = 25°C TC = 25°C 60 3.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 Nm/lb.in. PLUS 247 TO-264 6 10 g g (TAB) D TO-264 AA (IXFK) G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features RF capable Mosfets Rugged polysilicon gate cell structure ● Double metal process for low gate resistance ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier ● ● Applications ● Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.5 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 3 mA 85 mΩ DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching ● DC choppers ● Pulse generation ● Laser drivers ● Advantages ● ● ● PLUS 247TM package for clip or spring mounting Space savings High power density 98855-A (9/02) IXFK 55N50F IXFX 55N50F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 • ID25 Note 1 22 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 33 S 6700 pF 1250 pF C rss 330 pF td(on) 24 ns 20 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External) 45 ns 9.6 ns 195 nC 50 nC 95 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.21 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = 25A, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = 25A,-di/dt = 100 A/µs, VR = 100 V 55 A 220 A 1.5 V 250 ns 1.0 µC 10 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 55N50F IXFX 55N50F Fig. 2. Output Characteristics at 125oC Fig. 1. Output Characteristics at 25oC 100 140 TJ = 25OC 100 VGS = 10V 9V 8V TJ = 125OC VGS = 10V 9V 8V 80 ID - Amperes ID - Amperes 120 80 7V 60 40 40 6V 20 6V 20 7V 60 5V 5V 0 0 2 4 6 8 0 10 12 0 6 12 VDS - Volts VDS - Volts Fig. 3. RDS(ON) vs. Drain Current Fig. 4. RDS(ON) vs. TJ 4.0 3 VGS = 10V VGS = 10V RDS(ON) - Normalized RDS(ON) - Normalized 3.5 O TJ = 150 C 3.0 2.5 2.0 1.5 TJ = 25OC 1.0 0.5 0 10 20 30 40 2 ID = 27.5A 1 0 50 ID = 55A -25 0 ID - Amperes -50 50 75 100 125 150 Fig. 6. Admittance Curves 20 15 ID - Amperes 60 55 50 45 40 35 30 25 20 15 10 5 0 25 T J - Degrees C Fig. 5. Drain Current vs. Case Temperature ID - Amperes 18 10 TJ = 125oC 5 TJ = 25oC TJ = -40oC -25 0 25 50 75 T C - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXFK 55N50F IXFX 55N50F Fig. 8. Capacitance Curves Fig. 7. Gate Charge Characteristic Curve 15 10000 Ciss 5000 Capacitance - pF VGS - Volts VDS = 250V ID = 27.5A 10 5 f = 1MHz 2500 Coss 1000 Crss 500 0 0 50 100 150 200 250 250 300 0 Gate Charge - nC 5 10 15 20 25 30 VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 25 ID - Amperes 20 15 O O TJ = 25 C TJ = 125 C 10 5 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 10. Thermal Impedance ZthJC - (K/W) 1 0.1 Single Pulse 0.01 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1