HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000 V V ±20 ±30 V V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 21 84 21 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 500 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 PLUS 247 TO-264 Nm/lb.in. 6 10 Symbol Test Conditions V DSS VGS = 0 V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3 IGSS VGS = ±20 V, VDS = 0 IDSS RDS(on) g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.5 V ±100 nA VDS = VDSS TJ = 125°C VGS = 0 V 100 2 µA mA VGS = 10 V, ID = 0.5 • ID25 Note 1 0.50 Ω © 2002 IXYS All rights reserved G (TAB) D TO-264 AA (IXFK) G G = Gate S = Source D (TAB) S D = Drain TAB = Drain Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flammability classification Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density DS98677D(10/03) IXFK 21N100Q IXFX 21N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 20 V; ID = 0.5 • ID25 Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 16 22 S 6900 pF 550 pF Crss 90 pF td(on) 21 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 ns td(off) RG = 1 Ω (External), 60 ns 12 ns 170 nC 38 nC 75 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.26 RthJC RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 21 A ISM Repetitive; pulse width limited by TJM 84 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns trr QRM IF = IS,-di/dt = 100 A/µs, VR = 100 V 1.4 µC 8 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 21N100Q IXFX 21N100Q Fig. 1. Output Characteristics at 25oC Fig. 2. Output Characteristics at 125oC 30 50 TJ = 125OC O VGS = 10V 9V 8V ID - Amperes 25 7V ID - Amperes TJ = 25 C 40 30 20 6V 10 VGS = 10V 9V 8V 7V 20 6V 15 10 5V 5 5V 0 0 5 10 15 20 0 25 0 5 10 Fig. 3. RDS(ON) vs. Drain Current 30 3.0 VGS = 10V 2.5 TJ = 125OC RDS(ON) - Normalized RDS(ON) - Normalized 25 Fig. 4. RDS(ON) vs. TJ 3.0 2.0 1.5 O TJ = 25 C 1.0 0 5 10 15 20 25 ID = 21A 2.0 1.5 ID = 10.5A 1.0 0.5 0.0 30 VGS = 10V 2.5 -25 0 ID - Amperes 75 100 125 150 25 20 20 ID - Amperes 16 12 8 15 TJ = 125oC 10 TJ = 25oC 5 4 -50 50 Fig. 6. Admittance Curves 24 0 25 T J - Degrees C Fig. 5. Drain Current vs. Case Temperature ID - Amperes 20 VDS - Volts VDS - Volts 0.5 15 -25 0 25 50 75 T C - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 4.0 TJ = -40oC 4.5 5.0 5.5 VGS - Volts 6.0 6.5 7.0 IXFK 21N100Q IXFX 21N100Q Fig. 7. Gate Charge Characteristic Curve Fig. 8. Capacitance Curves 10.0 10000 VDS = 500 V ID = 10.5 A IG = 10 mA Capacitance - pF VGS - Volts 7.5 Ciss 5000 5.0 2.5 f = 1MHz 2500 Coss 1000 500 250 Crss 100 0.0 0 25 50 75 100 125 150 50 175 0 5 Gate Charge - nC 10 15 20 25 30 35 40 VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 25 ID - Amperes 20 15 TJ = 125oC 10 TJ = 25oC 5 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 10. Thermal Impedance 0.300 ZthJC - (K/W) 0.100 Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1