HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 17 A IDM TC = 25°C, pulse width limited by TJM 68 A IAR TC = 25°C 17 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TO-268 (D3) (IXFT) Case Style G (TAB) S TO-247 AD (IXFH) (TAB) TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight 1.13/10 Nm/lb.in. TO-247 TO-268 6 4 g g G = Gate S = Source Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 3 mA 800 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved V 4.5 V ±100 nA 25 1 µA mA 0.60 Ω D = Drain TAB = Drain z z z IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS99058A(06/03) IXFH 17N80Q IXFT 17N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 9 17 S 3600 pF 350 pF C rss 100 pF td(on) 18 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 1.5 Ω (External) 53 ns tf 16 ns Qg(on) 95 nC 20 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.31 (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 15 A ISM Repetitive; 60 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM IF = IS-di/dt = 100 A/µs, VR = 100 V 0.85 8 TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 17N80Q IXFT 17N80Q Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 18 35 16 30 6V 14 6V 25 12 10 I D - Amperes I D - Amperes VGS = 10V 7V VGS = 10V 5V 8 6 20 15 5V 10 4 5 2 0 0 0 2 4 6 8 10 12 0 5 10 Fig. 3. Output Characteristics @ 125 Deg. C 18 30 V GS = 10V 2.8 5V R D S (on) - Normalized I D - Amperes 25 3.1 14 12 10 8 6 4 2 2.5 2.2 1.9 ID = 17A 1.6 ID = 8.5A 1.3 1 0.7 0 0.4 0 5 10 15 20 25 30 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 2.8 18 VGS = 10V 16 2.5 14 TJ = 125ºC 2.2 I D - Amperes R D S (on) - Normalized 20 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 6V 16 15 V D S - Volts V D S - Volts 1.9 1.6 1.3 10 8 6 4 TJ = 25ºC 1 12 2 0.7 0 0 5 10 15 20 I D - Amperes © 2003 IXYS All rights reserved 25 30 35 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 17N80Q IXFT 17N80Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 25 40 35 30 g f s - Siemens I D - Amperes 20 15 10 TJ = 120ºC 25ºC -40ºC 5 TJ = -40ºC 25ºC 125ºC 25 20 15 10 5 0 0 3 3.5 4 4.5 5 5.5 6 0 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 25 30 35 40 Fig. 10. Gate Charge 50 10 40 VDS = 400V I D = 8.5A I G = 10mA 8 VG S - Volts I S - Amperes 20 I D - Amperes 30 TJ = 125ºC 20 TJ = 25ºC 6 4 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 20 40 60 80 100 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10000 1 C iss 1000 R (th) J C - (ºC/W) Capacitance - pF f = 1MHz C oss 100 0.1 C rss 10 0.01 0 5 10 15 20 25 30 35 40 V DS - Volts 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343