IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC100 IF110 ICM TC TC TC TC 90 50 25 210 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load ICM = 100 @VCE ≤ VCES A PC TC = 25°C 625 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 100°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque G E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z z z z z Weight C z Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC z z V z z TJ = 125°C IGES z Characteristic Values Min. Typ. Max. = 50A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved 4.2 5.0 V 50 500 μA μA ±100 nA 4.0 V V z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100388C(02/13) IXYH50N120C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 50A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 50A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 RthJC RthCS TO-247 (IXYH) Outline 32 S 3100 230 66 pF pF pF 142 23 60 nC nC nC 28 62 3.0 133 43 1.0 ns ns mJ ns ns mJ 1.7 28 68 6.0 160 60 1.4 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions VF IRM trr IF = 30A,VGE = 0V, Note 1 Characteristic Value Min. Typ. Max. TJ = 150°C IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 600V 195 TJ = 100°C RthJC Notes: 3.00 V V 9 A 1.75 ns 0.90 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH50N120C3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 250 100 VGE = 15V VGE = 15V 13V 11V 10V 90 80 14V 13V 200 12V 9V 60 IC - Amperes IC - Amperes 70 50 8V 40 11V 10V 100 9V 30 7V 20 50 10 8V 6V 0 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 20 VCE - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 25 2.2 VGE = 15V 13V 12V 11V 10V 80 70 VGE = 15V 2.0 I 1.8 VCE(sat) - Normalized 90 9V 60 50 8V 40 7V 30 C = 100A 1.6 1.4 I C = 50A 1.2 1.0 0.8 20 6V 10 0 1 2 3 4 5 6 7 I C = 25A 0.6 5V 0 0.4 -50 8 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 8.5 TJ = 25ºC 90 7.5 80 6.5 70 C = 100A IC - Amperes I VCE - Volts 15 VCE - Volts 100 IC - Amperes 150 5.5 4.5 50A 3.5 60 50 40 30 TJ = 150ºC 25ºC 20 - 40ºC 2.5 10 25A 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 9.5 IXYH50N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 44 16 TJ = - 40ºC 40 VCE = 600V 14 I C = 50A 36 28 24 I G = 10mA 12 25ºC VGE - Volts g f s - Siemens 32 150ºC 20 16 12 10 8 6 4 8 2 4 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 140 10,000 Cies 80 1,000 IC - Amperes Capacitance - PicoFarads 100 Coes 100 60 40 20 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 0 200 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH50N120C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 6 3.5 30 Eoff Eon - --- TJ = 150ºC , VGE = 15V 5 3.0 25 15 2 10 I C 0 15 VCE = 600V 15 2.0 1.5 9 TJ = 25ºC 1.0 6 5 0.5 3 20 25 0 0.0 20 30 30 40 50 5 t f i - Nanoseconds Eoff - MilliJoules 8 4 I C = 50A 0 100 500 100 400 I 80 C = 100A 300 I 60 0 5 10 15 160 tfi td(off) - - - - 220 180 TJ = 125ºC 80 160 60 140 TJ = 25ºC 120 20 100 0 50 60 70 80 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 80 100 t f i - Nanoseconds 100 td(off) - - - - 170 RG = 5Ω , VGE = 15V VCE = 600V 120 160 100 150 I C = 100A 80 140 I C = 50A 60 130 40 120 20 25 50 75 100 TJ - Degrees Centigrade 125 110 150 t d(off) - Nanoseconds t f i - Nanoseconds 200 t d(off) - Nanoseconds VCE = 600V 40 30 180 tfi 140 RG = 5Ω , VGE = 15V 30 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 240 20 20 RG - Ohms 160 40 200 20 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 120 = 50A 100 TJ - Degrees Centigrade 140 C 40 0 150 125 td(off) - - - - TJ = 150ºC, VGE = 15V t d(off) - Nanoseconds 12 2 75 0 100 VCE = 600V Eon - MilliJoules I C = 100A 50 120 16 VCE = 600V 25 90 600 tfi 1 80 140 ---- RG = 5Ω , VGE = 15V 3 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 20 4 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 12 TJ = 150ºC RG - Ohms Eoff 18 = 50A 1 10 Eoff - MilliJoules 3 ---- Eon - MilliJoules I C = 100A Eon RG = 5Ω , VGE = 15V 2.5 20 Eon - MilliJoules Eoff - MilliJoules VCE = 600V 4 5 21 Eoff IXYH50N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 350 I 200 tri 55 150 45 = 50A 100 35 50 25 0 10 15 20 25 160 36 TJ = 150ºC, 25ºC 120 32 80 28 40 24 0 15 5 40 VCE = 600V 200 C td(on) - - - - RG = 5Ω , VGE = 15V = 100A 65 I 44 20 30 30 RG - Ohms 40 50 60 70 80 90 t d(on) - Nanoseconds VCE = 600V 250 C 75 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 240 t r i - Nanoseconds tri 300 85 20 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 240 44 tri td(on) - - - - RG = 5Ω , VGE = 15V 200 40 160 36 I C = 100A 120 32 80 28 I C = 50A 40 24 0 25 50 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 75 100 125 20 150 TJ - Degrees Centigrade Fig. 21. Maximum Transient Thermal Impedance (Diode) 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N120C3D1(6N)05-04-12 IXYH50N120C3D1 Fig. 22. Forward Current IF vs VF Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt 5 70 TVJ = 100ºC 60 VR = 600V 4 50 IF = 60A TVJ = 150ºC IF [A] 100ºC 40 3 25ºC QRM [µC] 30 30A 2 15A 20 1 10 0 0 0.5 1 1.5 2 2.5 3 3.5 0 100 4 1000 500 VF [V] -diF/dt [A/µs] Fig. 25. Dynamic Parameters QRM, IRM vs. T VJ Fig. 24. Peak Reverse Current IRM vs. -diF/dt 2 60 TVJ = 100ºC IRM & Q RM [normalized] VR = 600V 50 40 IF = 60A, 30A, 15A IRM 30 [A] 20 1.5 1 IRM 0.5 QRM 10 0 0 0 200 400 600 800 20 1000 40 60 80 100 120 -diF/dt [A/µs] Fig. 26. Recovery Time trr vs. -diF/dt 120 1.2 TVJ = 100ºC TVJ = 100ºC IF = 30A 100 VR = 600V 200 160 Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt 220 1 trr 80 trr [ns] 140 TVJ [ºC] 0.8 180 VFR [V] IF = 60A 30A 15A 160 140 120 0.6 trr 60 [µs] VFR 40 0.4 20 0.2 0 0 200 400 600 -diF/dt [A/µs] © 2013 IXYS CORPORATION, All Rights Reserved 800 1000 0 100 200 300 400 500 600 -diF/dt [A/µs] 700 800 900 0 1000