HiPerFASTTM IGBT VCES IC25 VCE(sat) tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 40 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C ICM = 80 A 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 SMD TO-268 (IXGT) G E TO-247 AD (IXGH) C (TAB) G E C = Collector, TAB = Collector Features z z z 6 4 C G = Gate, E = Emitter, z 1.13/10 Nm/lb.in. C (TAB) g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol VGE(th) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 30 A, VGE = 15 V © 2003 IXYS All rights reserved 3.0 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 z z z z V z 50 1 µA mA ±100 nA 1.7 V PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers DS99109(10/03) IXGH 40N60B2D1 IXGT 40N60B2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 30 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 S 2560 pF 210 pF 54 pF 100 nC 15 nC 36 nC 18 ns 20 ns ∅P Cies Coes 36 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 30 A, VGE = 15 V, VCE = 300 V Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω tfi 130 200 ns 82 150 ns Eoff 0.4 0.8 mJ td(on) 18 ns tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω Eoff 20 ns 0.3 mJ 240 ns 150 ns 1.10 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.42 K/W (TO-247) Reverse Diode (FRED) 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 30 A, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C VR = 100 V TJ = 100°C 100 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 25 TJ =150°C 1.6 2.5 V V 4 A ns ns 0.9 K/W RthJC Min. Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 40N60B2D1 IXGT 40N60B2D1 Fig. 1. Output Characte ristics @ 25 Deg. C 60 9V VGE = 15V 13V 180 7V 30 20 9V 120 90 7V 60 10 30 5V 5V 0 0 0.5 1 1.5 2 2.5 0 3 1 2 Fig. 3. Output Characteristics @ 125 Deg. C 5 6 7 1.4 VGE = 15V 13V 11V 50 4 Fig. 4. De pende nce of V CE(sat) on Tem perature 9V V GE = 15V 1.3 V C E (sat)- Normalized 60 3 V C E - Volts V C E - Volts I C - Amperes 11V 150 40 I C - Amperes I C - Amperes 210 VGE = 15V 13V 11V 50 Fig. 2. Extended Output Characte ristics @ 25 de g. C 7V 40 30 20 10 5V 1.2 I C = 60A 1.1 1.0 0.9 I C = 30A 0.8 0.7 0 I C = 15A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 4 180 TJ = 25ºC 3.5 150 VC E - Volts 2.5 I C - Amperes I C = 60A 30A 15A 3 2 1.5 120 90 60 TJ = 125ºC 25ºC -40ºC 30 1 0 5 6 7 8 9 10 11 12 V G E - Volts © 2003 IXYS All rights reserved 13 14 15 16 17 3 4 5 6 7 V G E - Volts 8 9 10 IXGH 40N60B2D1 IXGT 40N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 60 3 40 I C = 60A 2.4 E off - milliJoules g f s - Siemens 2.7 TJ = -40ºC 25ºC 125ºC 50 30 20 TJ = 125ºC VGE = 15V VCE = 400V 2.1 1.8 1.5 I C = 30A 1.2 0.9 10 0.3 0 0 30 60 90 120 150 3 180 6 12 15 18 21 24 R G - Ohms Fig. 9. Dependence of Turn-Off Energy on Ic Fig. 10. Dependence of Turn-Off Energy on Tem perature 27 30 2.7 R G = 3.3Ω VGE = 15V VCE = 400V 2.1 R G = 3.3Ω VGE = 15V VCE = 400V 2.4 2.1 E off - milliJoules 2.4 1.8 1.5 TJ = 125ºC 1.2 0.9 0.6 I C = 60A 1.8 1.5 1.2 I C = 30A 0.9 0.6 TJ = 25ºC 0.3 0.3 0 I C = 15A 0 15 20 25 30 35 40 45 50 55 60 25 35 I C - Amperes 45 55 65 75 85 95 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 300 600 td(off) tfi - - - - - - 500 TJ = 125ºC VGE = 15V VCE = 400V 450 400 350 300 I C = 15A 250 I C = 30A I C = 60A 200 td(off) tfi - - - - - - 275 Switching Time - nanosecond 550 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Switching Time - nanosecond 9 I C - Amperes 2.7 E off - MilliJoules I C = 15A 0.6 150 100 R G = 3.3Ω VGE = 15V VCE = 400V 250 225 200 TJ = 125ºC 175 150 125 TJ = 25ºC 100 75 3 6 9 12 15 18 R G - Ohms 21 24 27 30 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 15 20 25 30 35 40 45 50 55 60 I C - Amperes 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 40N60B2 IXGT 40N60B2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Te m perature Fig. 14. Gate Charge 15 td(off) tfi - - - - - - 250 200 175 I C = 15A 150 I C = 30A 125 VCE = 300V I C = 30A I G = 10mA 12 R G = 3.3Ω VGE = 15V VCE = 400V 225 VG E - Volts Switching Time - nanosecond 275 I C = 60A 9 6 3 100 0 75 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Trans ient Therm al Res istance 0.45 0.4 R (th) J C - (ºC/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 IXGH 40N60B2D1 IXGT 40N60B2D1 60 A TVJ= 100°C nC VR = 300V 50 IF 30 1000 800 Qr 600 TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/µs 1000 -diF/dt VF Fig. 17. Forward current IF versus VF Fig. 18. Reverse recovery charge Qr versus -diF/dt 2.0 90 Kf 1.0 IRM 600 A/µs 800 1000 -diF/dt 400 1.00 TVJ= 100°C IF = 30A µs tfr 0.75 VFR tfr 80 IF= 60A IF= 30A IF= 15A 200 Fig. 19. Peak reverse current IRM versus -diF/dt V VFR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 10 0.50 5 0.25 70 0.5 0.0 Qr 0 40 80 120 °C 160 60 0 200 TVJ 400 600 800 1000 A/µs 0 0 200 400 -diF/dt Fig. 20. Dynamic parameters Qr, IRM versus TVJ Fig. 21. Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/µs 800 1000 diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 s t 1 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343