HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH ICM = 64 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 750µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C V 5.0 V 500 8 µA mA ±100 nA 2.3 V VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.3 V = 80 ns TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features z International standard packages JEDEC TO-247 SMD z High frequency IGBT and antiparallel FRED in one package z High current handling capability z Newest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z Space savings (two devices in one package) z High power density z Very fast switching speeds for high frequency applications DS95567C(02/03) IXGH32N60BU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 S 2700 pF 270 pF Cres 50 pF QG 110 150 nC 23 35 nC 40 75 nC Cies Coes QGE VCE = 25 V, VGE = 0 V, f = 1 MHz 15 IC = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 25 ns IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 4.7 Ω 20 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 100 200 ns 80 150 ns 0.6 1.2 mJ 25 ns 25 ns 1 mJ 120 ns 120 ns 1.2 mJ 0.25 0.62 K/W K/W Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.6 V IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs 10 VR = 360 V TJ = 125°C 150 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 35 15 A ns ns 50 1 K/W RthJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH32N60BU1 100 200 TJ = 25°C TJ = 25°C VGE = 15V 13V 11V 9V 7V 60 13V 11V 160 IC - Amperes IC - Amperes 80 VGE = 15V 40 20 9V 120 80 7V 40 5V 0 5V 0 0 1 2 3 4 5 6 7 0 2 4 8 10 VCE - Volts VCE - Volts Fig. 2. Extended Output Characteristics Fig. 1. Saturation Voltage Characteristics 1.75 100 TJ = 125°C VGE = 15V VCE (sat) - Normalized 80 IC - Amperes 6 60 40 20 IC = 64A 1.50 1.25 IC = 32A 1.00 IC = 16A 0 0 1 2 3 4 5 6 0.75 25 7 50 75 VCE - Volts 150 Fig. 4. Temperature Dependence of VCE(sat) 1.15 100 VCE = 10V BV/VGE(th) - Normalized 60 40 TJ = 125°C 20 4 5 6 7 8 9 0.95 0.90 0.85 BVCES IC = 250µA 0.80 0 25 50 75 100 125 150 TJ - Degrees C Fig. 6. Temperature Dependence of BVDSS & VGE(th) G32N60B P1 © 2003 IXYS All rights reserved 1.00 0.70 -50 -25 10 VGE - Volts Fig. 5. Admittance Curves 1.05 0.75 TJ = 25°C 3 VGE(th) IC = 250µA 1.10 80 IC - Amperes 125 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics 0 100 IXGH32N60BU1 2.5 5 2.5 TJ = 125°C 1.5 3 E(OFF) 40 60 3 E(OFF) 1 0.5 1 0 80 0.0 0.5 20 E(ON) 1.5 2 2 0 0 10 30 40 50 0 60 Fig. 8. Dependence of tfi and EOFF on RG. 100 IC = 32A VCE = 300V IC - Amperes 12 VGE - Volts 20 RG - Ohms IC - Amperes Fig. 7. Dependence of tfi and EOFF on IC. 15 4 1.0 1.0 0.0 E(ON) - millijoules E(ON) IC = 32A 2.0 E(OFF) - millijoules E(ON) - millijoules 4 RG = 10Ω E(OFF) - milliJoules 2.0 5 TJ = 125°C 9 6 TJ = 125°C 10 RG = 4.7Ω dV/dt < 5V/ns 1 3 0 0.1 0 25 50 75 100 125 150 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH32N60BU1 Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR 100 1000 25 TJ = 125°C 60 IF = 37A 20 TJ = 150°C 800 VFR VFR - Volts Current - Amperes 80 TJ = 100°C 40 TJ = 25°C 20 15 600 10 400 200 5 tfr 0 0.5 0 1.0 1.5 2.0 2.5 0 100 200 Voltage Drop - Volts 300 400 500 0 600 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 1.4 4 TJ = 100°C VR = 350V Qr - nanocoulombs Normalized IRM /Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 max. 2 typ. IF = 60A IF = 30A 1 IF = 15A 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C 1000 Fig.17 Reverse Recovery Time 40 0.8 TJ = 100°C IF = 30A IF = 30A VR = 350V TJ = 100°C max. VR = 350V max. trr - nanoseconds 30 IRM - Amperes 100 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current typ. IF = 60A 20 IF = 30A 3 IF = 30A IF = 15A 10 0 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 0.0 200 400 diF /dt - A/µs © 2003 IXYS All rights reserved 600 0 200 400 diF /dt - A/µs 600 tfr - nanoseconds Fig.12 Maximum Forward Voltage Drop IXGH32N60BU1 Fig.18 Diode Transient Thermal resistance junction to case RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1