High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 16 A IC90 TC = 90°C 11 A IF90 TC = 90°C, Diode 17 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 PC TC = 25°C 190 W ICM = 40 @ 0.8 VCES μs -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Md Mounting torque (M3) TO-247 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Weight Symbol TO-247 TO-268 Test Conditions = 250 μA, VGE = 0 V = 250 μA, VCE = VGE IC IC ICES VCE = 0.8 • VCES 16N170A VGE = 0 V, Note 1 16N170AH1 TJ = 125°C 16N170A 16N170AH1 IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 2005 IXYS All rights reserved °C 260 °C g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES VGE(th) = IC90, VGE = 15 V 300 6 4 1700 3.0 TJ = 125°C 4.0 4.8 TO-268 (IXGT) G E 5.0 V V 50 100 750 1.5 μA μA μA mA ±100 nA 5.0 V V C (TAB) TO-247 (IXGH) A TJM TJ H1 G G = Gate E = Emitter C C (TAB) E C = Collector, TAB = Collector Features High blocking voltage z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification z SONIC-FRDTM fast recovery copack diode z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) DS99235A(06/05) IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Symbol Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 7 13 S 1620 pF 83 110 pF pF Cres 31 pF Qg 83 nC 10 nC Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Qge 16N170A 16N170AH1 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C IC = IC25, VGE = 15 V, RG = 10 Ω VCE = 0.5 VCES ,Note 3 tri td(off) 31 nC 36 ns 57 tfi Eoff ns 160 300 ns 70 150 ns 0.85 1.5 mJ 38 ns 59 ns 1.5 2.5 mJ mJ td(off) 175 ns tfi 155 ns Eoff 2.0 mJ td(on) Inductive load, TJ = 125°°C IC = IC25, VGE = 15 V, RG = 10 Ω VCE = 0.5 VCES ,Note 3 tri Eon 16N170A 16N170AH1 RthJC TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.65 K/W RthCK (TO-247) 0.25 Reverse Diode (FRED) Characteristic Values Symbol Test Conditions (TJ = 25°C unless otherwise specified) VF IF = 20A, VGE = 0 V, Note 2 min. TJ = 125°C t rr K/W typ. max. 2.5 2.9 V 2.5 V IF = 20A, VGE = 0 V, -diF/dt = 450 A/μs 230 ns VR = 1200 V 400 ns 23 A 27 A TJ = 125°C IRM TJ = 125°C RthJC 0.9 K/W Notes: 1. 2. 3. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 100 16 14 VGE = 15V 90 13V 11V 9V 80 7V 10 13V 70 I C - Amperes I C - Amperes 12 VGE = 15V 8 6V 6 11V 60 50 9V 40 30 4 7V 20 5V 2 10 0 5V 0 1 2 3 4 5 6 7 0 V C E - Volts Fig. 3. Output Characteristics @ 125 ºC 6 9 12 15 18 21 V C E - Volts 24 27 30 Fig. 4. Dependence of V CE(sat) on Tem perature 16 1.8 VGE = 15V 1.7 13V 11V 9V 12 VGE = 15V 1.6 VC E (sat)- Normalized 14 I C - Amperes 3 7V 10 6V 8 6 4 1.4 1.3 1.2 1.1 I C = 8A 1.0 0.9 0.8 5V 2 I C = 16A 1.5 I C = 4A 0.7 0 0.6 1 2 3 4 5 6 7 8 -50 9 -25 0 V CE - Volts 25 50 75 100 125 150 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 40 10 TJ = 25ºC 9 35 I C = 16A 8A 4A 30 I C - Amperes VC E - Volts 8 7 6 5 25 20 15 TJ = 125ºC 25ºC 10 4 3 5 2 0 5 6 7 8 9 10 11 V G E - Volts © 2005 IXYS All rights reserved 12 13 14 15 -40ºC 4 4.5 5 5.5 6 6.5 V G E - Volts 7 7.5 IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 6 16 TJ = -40ºC 14 25ºC TJ = 125ºC 125ºC 12 VGE = 15V 5 E o f f - milliJoules g f s - Siemens 18 10 8 6 4 VCE = 850V I C = 24A 4 3 I C = 16A 2 I C = 8A 2 0 1 0 5 10 15 20 25 30 35 40 10 20 30 40 I C - Amperes Fig. 9. Dependence of Turn-Off 70 80 90 100 2.75 2.75 R G = 10Ω 2.50 R G = 10Ω 2.50 VGE = 15V VCE = 850V 2.00 1.75 1.50 1.25 TJ = 25ºC 1.00 I C = 32A VGE = 15V 2.25 TJ = 125ºC E o f f - milliJoules 2.25 E o f f - MilliJoules 60 Fig. 10. Dependence of Turn-off Energy Loss on Tem perature Energy Loss on IC VCE = 850V 2.00 1.75 I C = 16A 1.50 1.25 I C = 8A 1.00 0.75 0.75 0.50 0.50 8 12 16 20 24 28 25 32 35 45 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Fig. 12. Dependence of Turn-off Sw itching Tim e on RG Sw itching Tim e on IC 250 1000 td(off) 900 td(off) 800 tfi - - - - - TJ = 125ºC 700 VGE = 15V 600 VCE = 850V 500 400 I C = 16A 300 I C = 32A I C = 8A 200 100 0 Switching Time - nanoseconds Switching Time - nanoseconds 50 R G - Ohms 225 tfi - - - - - - TJ = 125ºC 200 R G = 10Ω VGE = 15V 175 VCE = 850V 150 125 100 TJ = 25ºC 75 50 10 20 30 40 50 60 70 80 90 100 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 8 12 16 20 I C - Amperes 24 28 32 IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 16 td(off) 225 200 R G = 10Ω 175 VGE = 15V 150 I C = 8A 12 I C = 8A VCE = 850V VCE = 850V 14 tfi - - - - - - VG E - Volts Switching Time - nanoseconds 250 I C = 16A 125 100 I G = 10mA 10 8 6 4 I C = 32A 75 2 50 0 25 35 45 55 65 75 85 95 105 115 125 0 10 20 TJ - Degrees Centigrade 40 50 60 70 80 90 Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 10000 45 f = 1 MHz 40 35 1000 I C - Amperes Capacitance - p F 30 Q G - nanoCoulombs C ies C oes 100 30 25 20 15 TJ = 125ºC 10 R G = 10Ω dV/dT < 10V/ns 5 C res 10 0 0 5 10 15 20 25 30 35 40 100 300 500 V C E - Volts 700 900 1100 1300 1500 1700 V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance R ( t h ) J C - ( ºC / W ) 1 0.1 1 10 100 Pulse Width - milliseconds © 2005 IXYS All rights reserved 1000 IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a subjective preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions.