GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE(sat) tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 60 30 150 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A (RBSOA) Clamped Inductive Load PC TC = 25°C VCE ≤ VCES TJ C (Tab) TO-220 (IXGP) G 300 W - 55 ... +150 °C 150 °C Tstg - 55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V 1200 5.0 z IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 125°C 2.96 2.95 z z High Power Density Low Gate Drive Requirement ±100 nA 3.5 V V Applications z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages V 100 μA 1 mA TJ = 125°C C = Collector Tab = Collector Advantages V 3.0 C (Tab) E Features z Characteristic Values Min. Typ. Max. C G = Gate E = Emitter z BVCES C (Tab) TO-247 (IXGH) TJM Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) CE Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines DS99730B(10/09) IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 11 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 19 S 1750 120 46 pF pF pF 87 15 39 nC nC nC 16 ns 37 3.47 ns mJ Qg Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 30A, VGE = 15V VCE = 0.8 • VCES, RG = 5Ω Notes 2 Eoff td(on) tri Eon td(off) tfi Eoff VCE = 0.8 • VCES,RG = 5Ω RthJC RthCS RthCS TO-220 TO-247 Notes: TO-220 (IXGP) Outline Inductive load, TJ = 125°°C IC = 30A,VGE = 15V Notes 2 127 200 ns 204 380 ns 2.16 4.0 mJ 18 38 6.70 216 255 5.10 ns ns mJ ns ns mJ 0.50 0.21 0.42 °C/W °C/W °C/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain TO-247 (IXGH) AD Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. TO-263 (IXGA) Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 1 = Gate 2 = Collector 3 = Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 60 200 VGE = 15V 13V 11V 50 VGE = 15V 180 160 9V IC - Amperes IC - Amperes 13V 140 40 30 20 120 11V 100 80 9V 60 7V 10 40 7V 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 3 6 9 12 18 21 24 27 30 Fig. 4. Dependence of VCE(sat) on JunctionTemperature Fig. 3. Output Characteristics @ T J = 125ºC 60 1.6 VGE = 15V 13V 11V VGE = 15V I C = 60A I C = 30A I C = 15A 1.4 VCE(sat) - Normalized 50 IC - Amperes 15 VCE - Volts VCE - Volts 40 9V 30 20 1.2 1.0 7V 0.8 10 5V 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 5.0 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 8 60 TJ = 25ºC 7 50 I C IC - Amperes VCE - Volts 6 = 60A 5 30A 4 40 30 TJ = 125ºC 25ºC - 40ºC 20 3 10 15A 2 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 TJ = - 40ºC 24 25ºC 16 VCE = 600V 12 I G = 10mA I C = 30A 10 VGE - Volts g f s - Siemens 20 14 125ºC 12 8 6 8 4 4 2 0 0 0 10 20 30 40 50 60 0 70 10 20 30 50 60 70 80 90 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 70 10,000 f = 1 MHz 60 50 Cies 1,000 IC - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs IC - Amperes Coes 100 40 30 20 10 Cres 10 0 5 10 15 20 25 30 35 40 0 200 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 18 --- 16 18 14 C = 60A 6 I C = 30A 4 2 13 15 17 19 21 23 12 VCE = 960V 10 6 6 8 4 4 6 2 4 0 TJ = 25ºC 20 25 30 6 8 4 6 I C = 30A 2 75 85 95 105 115 380 450 I 350 300 I 50 5 7 9 11 13 td(off) - - - - 25 250 TJ = 25ºC 100 45 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 50 55 60 325 220 I C = 60A, 30A 190 225 160 100 175 130 50 125 150 150 250 VCE = 960V 275 200 200 td(off) - - - - RG = 5Ω , VGE = 15V 375 t f - Nanoseconds t f - Nanoseconds 250 TJ = 125ºC 40 23 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 100 125 t d(off) - Nanoseconds 300 35 21 280 tf t d(off) - Nanoseconds 300 30 19 425 350 VCE = 960V 25 17 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 20 15 RG - Ohms 400 15 250 = 30A 220 2 125 450 350 C 150 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf C = 60A 340 TJ - Degrees Centigrade 400 550 260 4 0 td(off) - - - - VCE = 960V t f - Nanoseconds 10 65 60 t d(off) - Nanoseconds 8 55 55 TJ = 125ºC, VGE = 15V 420 12 I C = 60A 45 50 650 tf 14 VCE = 960V 35 45 460 E on - MilliJoules E off - MilliJoules ---- RG = 5Ω , VGE = 15V 25 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 16 10 35 IC - Amperes 14 Eon 2 0 15 25 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 10 TJ = 125ºC RG - Ohms 12 14 8 10 11 ---- 8 12 8 E off - MilliJoules I 10 9 Eon E on - MilliJoules 14 E on - MilliJoules 12 7 Eoff 12 16 VCE = 960V 5 16 RG = 5Ω , VGE = 15V TJ = 125ºC , VGE = 15V 14 E off - MilliJoules Eon - Eoff 16 20 IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 50 110 160 46 100 td(on) - - - - TJ = 125ºC, VGE = 15V I C 100 34 80 30 60 I C 20 0 5 7 9 11 13 15 17 19 21 23 26 VCE = 960V 80 24 TJ = 125ºC, 25ºC 70 22 20 50 18 40 16 30 14 20 12 18 10 10 14 0 22 = 30A 28 RG = 5Ω , VGE = 15V 60 26 40 td(on) - - - - 25 t d(on) - Nanoseconds 38 t d(on) - Nanoseconds 120 30 tr 90 42 = 60A VCE = 960V t r - Nanoseconds tr 140 t r - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 8 15 20 25 30 35 40 45 50 55 60 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 130 26 tr 110 td(on) - - - 24 RG = 5Ω , VGE = 15V t r - Nanoseconds 90 22 I C = 60A 70 20 50 18 30 I C 16 = 30A 10 25 35 45 55 65 75 t d(on) - Nanoseconds VCE = 960V 85 95 105 115 14 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_30N120B3(4A)10-06-09-A