GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.35V TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 48 A ICM TC = 25°C, 1ms 300 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω (RBSOA) Clamped inductive load @ ≤ 600V PC TC = 25°C TJ ICM = 96 A 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque (TO-247 & TO-220) 1.13/10 Nm/lb.in. Weight TO-247 TO-220 TO-263 6.0 3.0 2.5 g g g (TAB) TO-247 (IXGH) G C (TAB) E TO-220 (IXGP) G (TAB) C E G = Gate E = Emitter C = Collector TAB = Collector Features z z Optimized for low conduction losses International standard packages Advantages z Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V Typ. 5.0 VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 V z z 25 μA z 250 μA z z ±100 nA 1.18 1.35 V z z z z © 2008 IXYS CORPORATION, All rights reserved High power density Low gate drive requirement Applications V TJ = 125°C IGES Max. z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99581B(07/08) IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 32A, VCE = 10V, Note 1 30 TO-247 (IXGH) Outline 48 S 3190 pF 175 pF Cres 43 pF Qg 110 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 21 nC Qgc 42 nC td(on) 25 ns tri Eon td(off) tfi IC = 32A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 32A, VGE = 15V VCE = 480V, RG = 5Ω Eoff td(on) tri Inductive Load, TJ = 25°C Eon td(off) tfi IC = 32A, VGE = 15V VCE = 480V, RG = 5Ω Eoff 30 ns 0.95 mJ 334 ns 224 ns 2.90 mJ 24 ns 30 ns 1.97 mJ 545 ns 380 ns 5.60 mJ RthJC RthCS ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 °C/W (TO-247) (TO-220) 0.25 0.50 °C/W °C/W TO-220 (IXGP) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 70 330 VGE = 15V 13V 11V 60 270 11V 240 40 IC - Amperes 50 IC - Amperes VGE = 15V 13V 300 9V 30 7V 20 210 180 9V 150 120 90 60 10 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 2 4 8 10 12 VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 14 1.4 VGE = 15V 13V 11V VGE = 15V 1.3 VCE(sat) - Normalized 60 50 9V 40 30 7V 20 10 I C = 64A I C = 32A I C 1.2 1.1 1.0 0.9 0.8 0 = 16A 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 2.8 180 TJ = 25ºC 2.6 160 2.4 I 2.0 C 140 = 64A 32A 16A IC - Amperes 2.2 VCE - Volts 6 VCE - Volts 70 IC - Amperes 7V 0 0 1.8 1.6 120 100 80 1.4 60 1.2 40 1.0 20 0.8 TJ = 125ºC 25ºC - 40ºC 0 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 Fig. 7. Transconductance Fig. 8. Gate Charge 70 16 60 I C = 32A I G = 10mA 12 VGE - Volts g f s - Siemens 50 VCE = 300V 14 TJ = - 40ºC 25ºC 125ºC 40 30 20 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 IC - Amperes 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 100 10,000 80 Cies 70 1,000 IC - Amperes Capacitance - PicoFarads 90 Coes 100 60 50 40 30 20 Cres f = 1 MHz 10 10 0 5 10 15 20 25 30 35 40 0 100 TJ = 125ºC RG = 5Ω dV / dt < 10V / ns 150 VCE - Volts 200 250 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60A3(56) 07-10-08-A IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 14 I C 12 13 6 11 6 3 4 2 2 14 16 18 20 22 24 26 3 TJ = 125ºC 5 2 1 1 0 12 7 TJ = 25ºC 0 10 4 3 1 I C = 16A 9 28 0 15 30 20 25 30 RG - Ohms 6 500 I C I C = 32A 6 5 2 - MilliJoules 3 on 7 E 4 8 4 460 I I C = 16A 1 55 65 75 85 95 105 115 800 C 750 700 = 64A 650 16A 420 600 32A 400 550 500 16A 32A 360 2 td(off) - - - - 440 1 45 65 VCE = 480V 380 3 35 60 TJ = 125ºC, VGE = 15V 480 = 64A 9 25 55 850 tf 5 t f - Nanoseconds VCE = 480V Eoff - MilliJoules 10 50 t d(off) - Nanoseconds RG = 5Ω , VGE = 15V 45 520 ---- 11 Eon 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 13 Eoff 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 12 - MilliJoules I C = 32A 5 on 4 VCE = 480V ---- E 8 - MilliJoules TJ = 125ºC , VGE = 15V on E --- Eon RG = 5Ω , VGE = 15V VCE = 480V 5 Eon - Eoff 6 Eoff Eoff - MilliJoules 10 Eoff - MilliJoules 7 = 64A 450 64A 0 125 340 400 0 3 6 9 TJ - Degrees Centigrade 12 15 18 21 24 27 30 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 500 Fig. 17. Inductive Turn-on Switching Times vs. Junction Temperature 650 80 28 I C = 64A 600 350 500 tf td(off) - - - - RG = 5Ω , VGE = 15V 300 450 VCE = 480V 250 400 TJ = 25ºC 200 150 15 20 25 30 35 40 45 50 55 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 65 t r - Nanoseconds 550 27 tr 60 td(on) - - - - 26 RG = 5Ω , VGE = 15V VCE = 480V 50 25 40 24 I C = 32A 30 350 20 300 10 23 I 25 35 45 55 65 C = 16A 75 85 22 95 TJ - Degrees Centigrade 105 115 21 125 t d(on) - Nanoseconds TJ = 125ºC 400 70 t d(off) - Nanoseconds t f - Nanoseconds 450 IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tr 90 TJ = 125ºC, VGE = 15V 60 = 64A 60 I 40 = 32A C 50 36 40 32 I 30 C = 16A 27 25ºC < TJ < 125ºC 50 26 TJ = 25ºC 40 25 30 24 20 23 TJ = 125ºC tr 10 28 - Nanoseconds 44 28 d(on) 48 - Nanoseconds C 52 d(on) I 70 t 70 56 t VCE = 480V 80 t r - Nanoseconds td(on) - - - - t r - Nanoseconds 100 td(on) - - - 22 RG = 5Ω , VGE = 15V VCE = 480V 20 0 24 10 12 14 16 18 20 22 24 26 28 21 15 30 RG - Ohms 20 25 30 35 40 45 50 55 60 65 IC - Amperes Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature 480 650 tf 440 td(off) - - - 600 RG = 5Ω , VGE = 15V 550 360 C = 64A, 32A, 16A 500 320 I C = 64A, 32A, 16A 450 280 400 240 350 200 25 35 45 55 65 75 85 95 105 115 - Nanoseconds I d(off) 400 t t f - Nanoseconds VCE = 480V 300 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60A3(56) 07-10-08-A