High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM Continuous Transient ± 20 ± 30 V V IC25 IC110 IF110 ICM TC = 25°C (Limited by Lead) TC = 110°C TC = 110°C TC = 25°C, 1ms 75 40 25 200 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 80 @ 0.8 ≤ VCES A V PC TC = 25°C 380 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 G Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 G ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 © 2009 IXYS CORPORATION, All RrightsRreserved 2.9 V 100 μA 3 mA ±100 nA 3.5 V E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z 5.0 C (TAB) E TO-268 (IXGT) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C International Standard Packages IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers Square RBSOA Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages z z High Power Density Low Gate Drive Requirement DS99555B(02/09) IXGH40N120B2D1 IXGT40N120B2D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 23 IC = 40A, VCE = 10V, Note 1 TO-247 (IXGH) Outline 37 S 3360 pF 190 pF Cres 63 pF Qg 138 nC 20 nC Qgc 48 nC td(on) 21 ns 55 4.5 ns mJ 290 ns Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C tri Eon IC = 40A, VGE = 15V td(off) VCE = 960V, RG = 2Ω tfi Note 2 Eoff td(on) 140 270 ns 3.0 6.0 mJ 21 ns tri Inductive load, TJ = 125°C 58 ns Eon IC = 40A, VGE = 15V 6.5 mJ td(off) VCE = 960V, RG = 2Ω 350 ns tfi Note 2 420 ns 8.3 mJ Eoff 0.33 RthJC RthCS 0.21 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC °C/W °C/W TO-268 (IXGT) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 30A, VGE = 0V IRM IF = 30A, -di/dt = 100A/μs, VR = 300V,VGE = 0V trr Characteristic Values Min. Typ. Max. TJ = 150°C TJ = 100°C TJ = 100°C 2.8 V V 4 A 1.6 100 RthJC ns 0.9 °C/W Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 • VCES, Higher TJ or Increased RG. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH40N120B2D1 IXGT40N120B2D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 250 80 VGE = 15V 13V 11V 70 200 60 175 IC - Amperes IC - Amperes VGE = 15V 13V 225 9V 50 40 7V 30 11V 150 125 9V 100 75 20 50 10 7V 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 2 4 6 Fig. 3. Output Characteristics @ 125ºC 12 14 16 18 20 1.6 VGE = 15V 13V 11V 1.5 VGE = 15V 1.4 VCE(sat) - Normalized 60 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 70 8 VCE - Volts VCE - Volts 9V 50 40 7V 30 20 I 1.3 C = 80A 1.2 1.1 I 1.0 C = 40A 0.9 0.8 10 5V 0.7 0 I C = 20A 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 4.5 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 120 7 TJ = 25ºC 100 6 C 5 = 80A 40A 20A IC - Amperes VCE - Volts I 4 80 60 40 3 TJ = 125ºC 25ºC - 40ºC 20 2 0 5 6 7 8 9 10 11 12 13 VGE - Volts © 2009 IXYS CORPORATION, All RrightsRreserved 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGH40N120B2D1 IXGT40N120B2D1 Fig. 7. Transconductance 55 Fig. 8. Gate Charge 16 TJ = - 40ºC 50 VCE = 600V 14 I C = 40A 45 35 125ºC 30 I G = 10 mA 12 25ºC VGE - Volts g f s - Siemens 40 25 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 IC - Amperes 80 100 120 140 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 90 f = 1 MHz 80 70 Cies 1,000 IC - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs Coes 60 50 40 30 100 20 Cres 10 10 0 5 10 15 20 25 30 35 40 0 200 TJ = 125ºC RG = 2Ω dV / dt < 10V / ns 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_40N120B2(6ZC) 3-30-06 IXGH40N120B2D1 IXGT40N120B2D1 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 18 16 I = 80A C Eoff 16 14 Eon - Eoff 12 Eoff / Eon - MilliJoules Eoff / Eon - MilliJoules 14 --- TJ = 125ºC , VGE = 15V VCE = 960V 10 8 I = 40A C 6 Eon = 80A C VCE = 960V 12 10 8 I C = 40A 6 2 I 2 I = 20A C C = 20A 0 2 3 4 5 6 7 8 9 10 25 35 45 RG - Ohms 500 Eoff Eon ---- RG = 2Ω , VGE = 15V 75 85 95 105 115 TJ = 125ºC t f - Nanoseconds VCE = 960V 10 8 6 TJ = 25ºC 4 tf 620 td(off) - - - - 480 TJ = 125ºC, VGE = 15V 460 VCE = 960V I C 580 = 80A, 40A, 20V 540 440 500 420 460 400 420 380 380 360 340 I C = 80A, 40A, 20V 340 2 300 320 0 20 25 30 35 40 45 50 55 60 65 70 75 260 2 80 3 4 5 Fig. 16. Inductive Turn-off Switching Times vs. Junction Temperature 500 td(off) - - - 420 VCE = 960V 360 330 250 300 270 I C = 20A, 80A 150 240 100 210 125 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade © 2009 IXYS CORPORATION, All RrightsRreserved 460 440 440 tf td(off) - - - - 420 RG = 2Ω , VGE = 15V TJ = 125ºC 360 400 VCE = 960V 320 380 280 360 240 340 200 320 160 300 120 280 TJ = 25ºC 80 260 20 25 30 35 40 45 50 55 IC - Amperes 60 65 70 75 80 - Nanoseconds 300 25 10 d(off) = 20A, 40A, 80A 200 9 t C 390 t d(off) - Nanoseconds I 350 8 480 400 t f - Nanoseconds RG = 2Ω , VGE = 15V 400 7 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 450 450 6 RG - Ohms IC - Amperes tf 125 t d(off) - Nanoseconds 12 65 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 16 14 55 TJ - Degrees Centigrade Fig. 14. Inductive Switching Energy Loss vs. Collector Current t f - Nanoseconds I 4 4 Eoff / Eon - MilliJoules ---- RG = 2Ω , VGE = 15V IXGH40N120B2D1 IXGT40N120B2D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 30 120 120 29 110 28 100 I 110 t r - Nanoseconds td(on) - - - - 27 TJ = 125ºC, VGE = 15V 90 26 VCE = 960V 80 I 25 = 40A C 70 24 60 23 50 22 40 21 I 30 C = 20A 20 2 3 4 5 6 7 8 9 24 I C = 80A 90 tr 80 RG = 2Ω , VGE = 15V td(on) - - - 22 VCE = 960V 70 I C = 40A 60 21 50 40 20 30 19 20 20 I C = 20A 25 10 23 t d(on) - Nanoseconds 100 = 80A t d(on) - Nanoseconds tr C t r - Nanoseconds 130 RG - Ohms 35 45 55 65 75 85 95 105 115 19 125 TJ - Degrees Centigrade Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 120 24 tr 110 RG = 2Ω , VGE = 15V 25ºC < TJ < 125ºC VCE = 960V 100 90 23 80 22 70 60 21 50 40 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - 20 30 20 19 20 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_40N120B2(6ZC) 3-30-06 IXGH40N120B2D1 IXGT40N120B2D1 1000 60 A 50 IF 30 TVJ= 100°C 800 Qr TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A nC V = 300V R 0 1 0 100 3 V 2 5 A/μs 1000 -diF /dt VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr versus -diF/dt 2.0 90 Kf 200 IF= 60A IF= 30A IF= 15A IRM 1000 1.00 TVJ= 100°C IF = 30A μs tfr 0.75 VFR tfr 80 1.0 600 A/μs 800 -diF /dt 400 Fig. 23. Peak reverse current IRM versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 T VJ 200 400 600 800 A/μs 1000 0 0 400 -diF /dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation i 0.1 Z thJC 1 2 3 0.01 0.001 0.00001 200 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction to case © 2009 IXYS CORPORATION, All RrightsRreserved 0.1 t s 1 Rth ( °C/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0397