Preliminary Technical Information IXGH6N170A IXGT6N170A High Voltage IGBTs VCES IC25 VCE(sat) tfi(typ) = = ≤ = 1700V 6A 7.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 6 A IC110 TC = 110°C 3 A ICM TC = 25°C, 1ms 14 A SSOA VGE = 15V, TVJ = 125°C, RG = 33Ω ICM = 12 A (RBSOA) Clamped Inductive Load tSC TJ = 125°C, VCE = 1200 V, VGE = 15 V, RG = 33Ω 10 μs PC TC = 25°C 75 W - 55 ... +150 °C G C C (TAB) E TO-268 (IXGT) G E C (TAB) @ 0.8 • VCES TJ G = Gate E = Emitter TJM 150 °C Tstg - 55 ... +150 °C Features 300 260 °C °C z TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 125°C Advantages z z z V TJ = 125°C International Standard Packages High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. BVCES © 2009 IXYS CORPORATION, All Rights Reserved g g C = Collector TAB = Collector 5.0 V 10 500 μA μA ±100 nA 7.0 V z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines 5.4 DS98990B(04/09) IXGH6N170A IXGT6N170A Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 6A, VCE = 20V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 2.0 Qg Qge Qgc td(on) tri Eon IC = 6A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 6A, VGE = 15V td(off) VCE = 0.5 • VCES, RG = 33Ω tfi Note 1 Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = 6A, VGE = 15V VCE = 0.5 • VCES, RG = 33Ω Note 1 RthJC RthCK TO-247 AD Outline 3.5 S 390 20 7 pF pF pF 18.5 2.8 8.2 nC nC nC 46 ns 40 0.59 ns mJ 220 400 ns 32 65 ns 0.18 0.36 mJ 48 43 0.62 230 41 0.25 ns ns mJ ns ns mJ 0.21 1.65 °C/W °C/W 1 2 3 Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. Min Recommended Footprint Terminals: 1 - Gate 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH6N170A IXGT6N170A Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 12 24 VGE = 15V 13V 11V 11 20 9 18 8 16 9V 7 IC - Amperes IC - Amperes 10 VGE = 15V 22 6 5 4 7V 11V 14 12 10 9V 8 3 6 2 4 1 13V 7V 2 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 12 VGE = 15V 1.8 I VCE(sat) - Normalized 9 IC - Amperes 30 2.0 VGE = 15V 13V 11V 10 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 11 20 VCE - Volts VCE - Volts 8 7 9V 6 5 4 7V 3 = 12A 1.4 1.2 I C =6A I C = 3A 1.0 0.8 2 0.6 1 C 1.6 5V 0.4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 -50 14 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 12 18 11 TJ = 25ºC 16 10 9 I 12 C IC - Amperes VCE - Volts 14 = 12A 10 8 7 6 5 4 8 6A TJ = 125ºC 25ºC - 40ºC 3 2 6 3A 1 4 0 6 7 8 9 10 11 12 13 14 15 16 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 17 18 19 20 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGE - Volts IXYS REF: G_6N170A(2N)4-15-09 IXGH6N170A IXGT6N170A Fig. 7. Transconductance Fig. 8. Gate Charge 5.0 16 TJ = - 40ºC 4.5 VCE = 850V 14 I C = 6A 4.0 3.0 25ºC 12 125ºC 10 VGE - Volts g f s - Siemens 3.5 2.5 2.0 I G = 1mA 8 6 1.5 4 1.0 2 0.5 0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 2 4 6 IC - Amperes 8 10 12 14 16 18 20 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 1,000 13 12 11 Capacitance - PicoFarads 10 IC - Amperes 9 8 7 6 5 4 3 2 TJ = 125ºC Cies 100 Coes 10 Cres RG = 33Ω dV / dt < 10V / ns f = 1 MHz 1 0 200 1 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 VCE - Volts 20 25 30 35 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10.0 1.0 0.1 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGH6N170A IXGT6N170A Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.5 0.7 --- TJ = 125ºC , VGE = 15V VCE = 850V 0.6 C 3.0 0.6 2.5 0.5 = 12A 0.5 2.0 0.4 1.5 0.3 I C = 6A 0.2 0.1 30 40 50 60 70 80 90 100 110 3.5 Eoff Eon ---3.0 RG = 33Ω , VGE = 15V VCE = 850V 2.5 0.4 2.0 TJ = 125ºC, 25ºC 0.3 1.5 1.0 0.2 1.0 0.5 0.1 0.5 0.0 120 0.0 0.0 6 RG - Ohms E - MilliJoules on I 0.7 E - MilliJoules on Eo f f - MilliJoules Eon - Eoff Eo f f - MilliJoules 0.8 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 7 8 9 10 11 12 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.8 2.00 Eoff ---- 1.75 RG = 33Ω , VGE = 15V VCE = 850V 0.6 0.5 I C 1.50 E - MilliJoules on Eo f f - MilliJoules 0.7 Eon 1.25 = 12A 0.4 1.00 0.3 0.75 I C = 6A 0.2 0.50 0.1 25 35 45 55 65 75 85 95 105 115 0.25 125 TJ - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_6N170A(2N)4-15-09