GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V A IC25 TC = 25°C 60 IC110 TC = 110°C 30 A ICM TC = 25°C, 1ms 150 A ICM = 60 A 220 W -55 ... +150 °C SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω (RBSOA) Clamped inductive load @ ≤ 600V PC TC = 25°C TJ TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque (TO-220 & TO-247) Weight TO-220 TO-263 TO-263 1.13/10 Nm/lb.in. 2.5 3.0 3.0 g g g Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 Typ. Max. V 5.5 V 15 μA 300 μA TJ = 125°C ±100 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 2.6 1.8 3.0 V V E C(TAB) TO-220 (IXGP) G C C(TAB) E TO-247 (IXGH) G C E G = Gate E = Emitter C (TAB) C = Collector TAB = Collector Features Optimized for low switching losses Square RBSOA International standard packages Advantages High power density Low gate drive requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100012A(11/08) IXGA30N60C3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 20A, VCE = 10V, Note 1 9 Cies Coes TO-220 (IXGP) Outline 16 S 915 pF 78 pF Cres 32 pF Qg 38 nC Qge VCE = 25V, VGE = 0V, f = 1MHz 8 nC Qgc 17 nC td(on) 16 ns tri Eon td(off) tfi IC = 20A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 20A, VGE = 15V 26 ns 0.27 mJ 42 VCE = 300V, RG = 5Ω Eoff 0.09 td(on) 17 tri Eon td(off) tfi Inductive Load, TJ = 125°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Eoff Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain ns ns 0.18 mJ ns 28 ns 0.44 mJ 70 ns 90 ns 0.33 mJ RthJC RthCS 75 47 IXGP30N60C3 IXGH30N60C3 0.56 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W TO-247 (IXGH) AD Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXGA) Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGA30N60C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 180 VGE = 15V 13V 35 140 11V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 30 20 9V 15 10 13V 100 11V 80 60 9V 40 5 7V 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 40 1.1 VGE = 15V 13V 11V 35 VGE = 15V 1.0 VCE(sat) - Normalized 30 IC - Amperes IXGP30N60C3 IXGH30N60C3 9V 25 20 15 I C = 40A 0.9 0.8 I C = 20A 0.7 10 I 0.6 5 C = 10A 7V 0.5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 3.2 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 70 5.5 TJ = 25ºC 60 5.0 50 I 4.0 C IC - Amperes VCE - Volts 4.5 = 40A 20A 10A 3.5 40 TJ = 125ºC 25ºC - 40ºC 30 20 3.0 10 2.5 0 7 8 9 10 11 12 13 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 14 15 5 6 7 8 VGE - Volts 9 10 11 IXGA30N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 24 16 TJ = - 40ºC 22 16 125ºC 14 I C = 20A I G = 10 mA 12 25ºC VGE - Volts g f s - Siemens VCE = 300V 14 20 18 IXGP30N60C3 IXGH30N60C3 12 10 8 6 10 8 6 4 4 2 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 40 10,000 60 50 Cies 1,000 IC - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 40 30 20 TJ = 125ºC 10 Cres 0 100 10 0 5 10 15 20 25 30 35 40 RG = 5Ω dV / dt < 10V / ns 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. 0.1 1 10 IXGA30N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 Eon - Eoff 0.7 1.4 0.6 1.2 0.5 1.2 Eoff --- TJ = 125ºC , VGE = 15V 0.3 I C = 20A 0.2 8 10 12 14 16 18 Eoff - MilliJoules 0.6 0.8 TJ = 125ºC 0.3 0.6 0.2 0.4 0.1 0.2 0.0 0.4 TJ = 25ºC 15 20 RG - Ohms E 0.8 0.3 0.6 0.2 0.4 0.2 0 55 65 tf 160 TJ = 125ºC, VGE = 15V 75 td(off) - - - - 110 140 100 130 I 85 95 105 115 80 110 70 I 50 40 4 6 8 10 18 20 140 70 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 35 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 40 t f - Nanoseconds 100 td(off) - - - - 80 RG = 5Ω , VGE = 15V 120 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds t f - Nanoseconds 16 VCE = 300V t d(off) - Nanoseconds 80 TJ = 125ºC 30 14 90 tf 90 25 12 160 100 VCE = 300V 20 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 15 = 20A 80 110 10 C RG - Ohms td(off) - - - - 120 90 = 40A 90 0.0 125 180 140 C 120 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 120 VCE = 300V 150 TJ - Degrees Centigrade tf 130 100 I C = 20A 45 - MilliJoules 0.4 t f - Nanoseconds 1.0 I C = 40A 35 170 t d(off) - Nanoseconds VCE = 300V 25 40 140 1.2 on Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 0.1 35 180 1.4 0.5 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.7 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0.0 10 20 - MilliJoules 0.4 - MilliJoules 0.8 0.4 on 1.0 = 40A 0.5 0.6 1.0 E C on I E Eoff - MilliJoules ---- VCE = 300V 0.6 6 Eon RG = 5Ω , VGE = 15V VCE = 300V 4 IXGP30N60C3 IXGH30N60C3 IXGA30N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 td(on) - - - - 28 TJ = 125ºC, VGE = 15V 60 I C 24 = 40A 50 22 40 20 30 I C 20 10 4 6 8 10 12 14 16 18 22 RG = 5Ω , VGE = 15V VCE = 300V 50 20 TJ = 125ºC 40 18 TJ = 25ºC 30 16 20 14 16 10 12 14 0 18 = 20A td(on) - - - - 10 10 20 t d(on) - Nanoseconds 26 t d(on) - Nanoseconds VCE = 300V 70 24 tr 60 t r - Nanoseconds 80 t r - Nanoseconds 70 30 tr IXGP30N60C3 IXGH30N60C3 15 20 25 30 35 40 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 21 75 70 65 20 I C = 40A t r - Nanoseconds 55 tr 50 td(on) - - - - RG = 5Ω , VGE = 15V 45 VCE = 300V 19 18 40 35 I 30 C 17 = 20A t d(on) - Nanoseconds 60 16 25 20 15 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_30N60C3(4D) 7-25-08