JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-251 Plastic-Encapsulate Transistors C 2611 TRANSISTOR（ NPN ） TO—251 FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃ unless otherwise specified） Parameter Symbol Test 1. EMITTER 2.COLLECTOR 3.BASE conditions MIN 1 2 TYP 3 MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ，IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA，IC=0 7 V Collector cut-off current ICBO VCB= 600 V , IE=0 100 μA Collector cut-off current ICEO VCE= 400 V , IB=0 200 μA Emitter cut-off current IEBO VEB= 7 V , 100 μA hFE（1） VCE= 20 hFE（2） VCE= 10V, IC= 0.25 mA Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 m A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10m A 1.2 V mA , IB=0 IC=0 V, IC= 20m A 10 40 DC current gain 5 VCE= 20 V, IC=20mA f Transition frequency 8 T MHz f = 1MHz t Fall time f IC=50mA, 0.3 μs 1.5 μs IB1=-IB2=5mA, tS Storage time VCC=45V CLASSIFICATION OF h FE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 TO-251 PACKAGE OUTLINE DIMENSIONS D A D1 E B C1 L b1 b e A1 e1 Symbol C Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.200 2.400 0.087 0.094 A1 1.020 1.270 0.040 0.050 B 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 5.700 0.213 0.224 0.091TYP 2.300TYP e e1 4.500 4.700 0.177 0.185 L 7.500 7.900 0.295 0.311