JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR（ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W 2.BASE （Tamb=25℃） Collector current 3. COLLECTOR ICM : 0.2 A Collector-base voltage 1 2 3 V(BR)CBO : 400 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μA， IC=0 5 Collector cut-off current ICBO VCB=400 V , IE=0 Collector cut-off current ICEO VCE=400 V , Emitter cut-off current IEBO VEB= 4 HFE（1） VCE=10V , IC=10 mA 80 HFE（2） VCE=10V, IC=1mA 70 HFE（3） VCE=10V ,IC=100 mA 60 VCE(sat) IC=10 mA, IB=1mA 0.2 V VCE(sat) IC=50 mA, IB=5mA 0.3 V Base-emitter sataration voltage VBE(sat) IC=10 mA, IB= 1 mA 0.75 V Transition fT DC current gain mA , V, IC=0 V 0.1 μA 5 μA 0.1 μA 300 Collector-emitter saturation voltage VCE=20V, frequency IC=10mA 50 f =30MHz MHz TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015