JIANGSU A44

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A44
TRANSISTOR( NPN )
TO—92
FEATURES
1.EMITTER
Power dissipation
PCM : 0.625 W
2.BASE
(Tamb=25℃)
Collector current
3. COLLECTOR
ICM : 0.2 A
Collector-base voltage
1 2 3
V(BR)CBO : 400 V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA , IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1
IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,
IC=0
5
Collector cut-off current
ICBO
VCB=400 V ,
IE=0
Collector cut-off current
ICEO
VCE=400 V ,
Emitter cut-off current
IEBO
VEB= 4
HFE(1)
VCE=10V , IC=10 mA
80
HFE(2)
VCE=10V, IC=1mA
70
HFE(3)
VCE=10V ,IC=100 mA
60
VCE(sat)
IC=10 mA, IB=1mA
0.2
V
VCE(sat)
IC=50 mA, IB=5mA
0.3
V
Base-emitter sataration voltage
VBE(sat)
IC=10 mA, IB= 1 mA
0.75
V
Transition
fT
DC current gain
mA ,
V,
IC=0
V
0.1
μA
5
μA
0.1
μA
300
Collector-emitter saturation voltage
VCE=20V,
frequency
IC=10mA
50
f =30MHz
MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
φ
e
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
0.135
4.700
0.169
1.270TYP
e
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
0.380
0.063
0.000
0.015