JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A92 ） TRANSISTOR（ PNP TO—92 FEATURES Power dissipation PCM : 0.625W（Tamb=25℃） Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -300V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless Parameter Symbol Test 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA，IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA， IC=0 -5 V Collector cut-off current ICBO VCB= -200 V IE=0 Emitter cut-off current IEBO VEB= -5 V， IC=0 -0.25 μA -0.1 μA hFE（1） VCE= -10 V, IC=- 1 mA 60 hFE（2） VCE= -10V, IC = -10 mA 80 hFE（3） VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V DC current gain Transition frequency fT VCE= -20 V, IC= -10 mA f = 30MHz 250 50 MHz CLASSIFICATION OF h FE(2) Rank A B1 B2 C Range 80-100 100-150 150-200 200-250 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015