JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR (PNP) TO—92 FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -50μA ， IE=0 -210 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0 -210 V Emitter-base breakdown voltage V(BR)EBO IE= -50μA， IC=0 -5 Collector cut-off current ICBO VCB=-150V, Emitter cut-off current IEBO VEB= -4.5 V , DC current gain hFE VCE=-3 V, IC= -5mA Collector-emitter saturation voltage VCEsat IC= -2mA, IB= -0.2mA Transition frequency f Output capacitance Cob T IE=0 IC=0 VCE=-5V, IC= -2mA VCE=-10V,IE=0,f=1MHz 56 V -1 μA -1 μA 270 -0.6 30 V MHz 12 CLASSIFICATION OF hFE Rank N P Q Range 56-120 82-180 120-270 pF TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015