ETC BC309

CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD
TO-92 Plastic-Encapsulate Transistors
www.haorm.cn
BC307/308/309
TRANSISTOR (PNP)
TO-92
FEATURES
Amplifier dissipation NPN Silicon
1. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2. BASE
Symbol
Parameter
Value
IC
BC307
BC308/309
Emitter-Base Voltage
BC307
BC308/309
Collector Current -Continuous
-45
-25
-6
-5
-0.1
A
PC
Collector Power Dissipation
500
mW
357
℃/W
125
℃/W
VCEO
VEBO
Collector-Emitter Voltage
Units
1 2 3
V
RθJC
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Case
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
RθJA
3. EMITTER
V
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
IC=-10μA, IE=0
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
Collector cut-off current
ICBO
VCB=-45V,IE=0
VCB=-25V,IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Noise figure
CLASSIFICATION OF
Rank
Range
BC307
BC308/309
BC307
BC308/309
IC=-2mA, IB=0
MIN
TYP
MAX
-50
-30
-45
-25
UNIT
V
V
-5
V
BC307
BC308/309
120
-15
nA
-15
nA
800
IC=-10mA, IB=-0.5mA
-0.3
V
IC=-100mA, IB=-5mA
-0.6
V
IC=-10mA, IB=-0.5mA
-0.75
V
IC=-100mA, IB=-5mA
-1
V
-0.75
V
VCE=-5V, IC=-2mA
-0.55
VCE=-5V, IC=-10mA, f=50MHz
Cob
VCB=-10V, IE=0, f=1MHz
NF
VCE=-5V, IC=-0.2mA ,
f=1KHz, RG=2KΩ
BC307/BC308
BC309
VCE=-5V, IC=-0.2mA ,
f=30-15KHz, RG=2KΩ
BC309
130
MHz
6
pF
10
4
dB
4
hFE
A
B
C
120-220
180-460
380-800
Typical Characteristics