CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR (PNP) TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous -45 -25 -6 -5 -0.1 A PC Collector Power Dissipation 500 mW 357 ℃/W 125 ℃/W VCEO VEBO Collector-Emitter Voltage Units 1 2 3 V RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA 3. EMITTER V ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions IC=-10μA, IE=0 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 Collector cut-off current ICBO VCB=-45V,IE=0 VCB=-25V,IE=0 Emitter cut-off current IEBO VEB=-5V, IC=0 DC current gain hFE VCE=-5V, IC=-2mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Noise figure CLASSIFICATION OF Rank Range BC307 BC308/309 BC307 BC308/309 IC=-2mA, IB=0 MIN TYP MAX -50 -30 -45 -25 UNIT V V -5 V BC307 BC308/309 120 -15 nA -15 nA 800 IC=-10mA, IB=-0.5mA -0.3 V IC=-100mA, IB=-5mA -0.6 V IC=-10mA, IB=-0.5mA -0.75 V IC=-100mA, IB=-5mA -1 V -0.75 V VCE=-5V, IC=-2mA -0.55 VCE=-5V, IC=-10mA, f=50MHz Cob VCB=-10V, IE=0, f=1MHz NF VCE=-5V, IC=-0.2mA , f=1KHz, RG=2KΩ BC307/BC308 BC309 VCE=-5V, IC=-0.2mA , f=30-15KHz, RG=2KΩ BC309 130 MHz 6 pF 10 4 dB 4 hFE A B C 120-220 180-460 380-800 Typical Characteristics