JMnic Product Specification 2SA1771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -14 V IC Collector current -12 A IB Base current -1.2 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1771 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-0.3A -0.4 V VBEsat Base-emitter saturation voltage IC=-6A; IB=-0.3A -1.2 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-14V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 100 hFE-2 DC current gain IC=-6A ; VCE=-1V 40 Transition frequency IC=-1A ; VCE=-5V 50 MHz Collector output capacitance f=1MHz;VCB=-10V 300 pF 0.2 μs 0.6 μs 0.1 μs fT COB ton Turn-on time ts Storage time tf Fall time CONDITIONS IB1=-IB2=-0.3A; VCC=-30V RL=5Ω Duty cycle≤1% 2 MIN TYP. MAX -80 UNIT V 320 JMnic Product Specification 2SA1771 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SA1771 Silicon PNP Power Transistors 4