JMnic Product Specification 2SC5287 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC5287 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A 0.5 V VBEsat Base-emitter saturation voltage IC=1.8A; IB=0.36A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1.8A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=-0.35A ; VCE=12V 6 MHz 550 UNIT V 10 25 Switching times ton Turn-on time ts Storage time tf Fall time IC=1.8A; RL=139Ω IB1=0.27A; IB2=-0.9A VCC=250V 2 0.7 μs 4.0 μs 0.5 μs JMnic Product Specification 2SC5287 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SC5287 Silicon NPN Power Transistors 4