JMnic Product Specification 2SC4298 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC4298 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=8A;IB=1.6A 0.5 V VBEsat Base-emitter saturation voltage IC=8A;IB=1.6A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=8A ; VCE=4V fT Transition frequency IE=-1.5A ; VCE=12V 10 MHz COB Output capacitance VCB=10V;f=1MHz 85 pF 400 UNIT V 10 30 Switching times ton Turn-on time tstg Storage time tf IC=8A;IB1=0.8A; IB2=-1.6A;RL=25Ω VCC=200V Fall time 2 1.0 μs 3.0 μs 0.5 μs JMnic Product Specification 2SC4298 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC4298 Silicon NPN Power Transistors 4