JMnic Product Specification 2SA1452 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3710 APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A IB Base current -2 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1452 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-0.3A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-0.3A -0.9 -1.2 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-6A ; VCE=-1V 40 Transition frequency IC=-1A ; VCE=-5V 50 MHz Collector output capacitance IE=0; VCE=-10V;f=1MHz 400 pF 0.3 μs 1.0 μs 0.5 μs fT Cob CONDITIONS MIN TYP. MAX -80 UNIT V 240 Switching times Ton Turn-on time ts Storage time tf Fall time IB1=-IB2=-0.3A VCC=-30V;RL=5Ω hFE-1 Classifications O Y 70-140 120-240 2 JMnic Product Specification 2SA1452 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SA1452 Silicon PNP Power Transistors 4