JMnic Product Specification 2SB1133 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1666 ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -8 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ JMnic Product Specification 2SB1133 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ;RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter saturation voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-40V ;IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 70 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 110 pF fT Transition frequency IC=-0.5A ; VCE=-5V 40 MHz VCEsat CONDITIONS hFE-1 Classifications Q R S 70-140 100-200 140-280 2 MIN TYP. MAX UNIT 280 JMnic Product Specification 2SB1133 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB1133 Silicon PNP Power Transistors 4