JMNIC 2SB1133

JMnic
Product Specification
2SB1133
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD1666
・Low collector saturation voltage
・Wide area of safe operation
APPLICATIONS
・For low-frequency and general-purpose
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-3
A
ICM
Collector current-peak
-8
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-40~150
℃
JMnic
Product Specification
2SB1133
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA ;RBE=∞
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBE
Base-emitter saturation voltage
IC=-0.5A ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-40V ;IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
70
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
110
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
40
MHz
VCEsat
‹
CONDITIONS
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
MIN
TYP.
MAX
UNIT
280
JMnic
Product Specification
2SB1133
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB1133
Silicon PNP Power Transistors
4