JMnic Product Specification 2SB776 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD896 ・Wide area of safe operation APPLICATIONS ・100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICM Collector current-peak -11 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB776 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-4A ;IB=-0.4A VBE Base-emitter on voltage ICBO VCEsat CONDITIONS MIN TYP. UNIT -2.0 V IC=-1A;VCE=-5V -1.5 V Collector cut-off current VCB=-80V IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V 15 MHz Collector output capacitance f=1MHz;VCB=10V 200 pF 0.2 μs 1.2 μs 0.3 μs fT COB -0.9 MAX 200 Switching times ton Turn-on time tstg Storage time tf IC=-1.0A; IB1=-IB2=-0.1A RL=20Ω;VCC=20V Fall time hFE-1 Classifications D E 60-120 100-200 2 JMnic Product Specification 2SB776 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SB776 Silicon PNP Power Transistors 4