JMnic Product Specification 2SA1671 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC4386 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A IB Base current -3 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1671 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -0.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V VCEsat fT CONDITIONS hFE classifications O P Y 50-100 70-140 90-180 2 MIN TYP. 50 MAX UNIT 180 20 MHz JMnic Product Specification 2SA1671 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3