JMNIC 2SC3296

JMnic
Product Specification
2SC3296
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Wide area of safe operation
・Complement to type 2SA1304
APPLICATIONS
・Power amplifier applications
・Vertical output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1.5
A
IB
Base current
0.5
A
PC
Collector power dissipation
Ta=25℃
2
W
TC=25℃
20
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SC3296
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A ;IB=50mA
1.5
V
VBE
Base-emitter on voltage
IC=0.5A ; VCE=10V
0.85
V
ICBO
Collector cut-off current
VCB=120V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=0.5A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
35
pF
fT
Transition frequency
IC=0.5A ; VCE=10V
4
MHz
2
MIN
TYP.
MAX
150
UNIT
V
40
140
JMnic
Product Specification
2SC3296
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
2SC3296
Silicon NPN Power Transistors
4