JMnic Product Specification 2SB552 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -220 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ TC=25℃ JMnic Product Specification 2SB552 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -2.0 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.5 V ICBO Collector cut-off current VCB=-220V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 300 pF fT Transition frequency IC=-1A ; VCE=-10V 3.5 MHz 2 MIN TYP. MAX -180 UNIT V 25 80 JMnic Product Specification 2SB552 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3