JMnic Product Specification 2SC3212 2SC3212A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC3212 VCBO Collector-base voltage VALUE UNIT 800 Open emitter 2SC3212A V 900 VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector 500 V 8 V IC Collector current 7 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation TC=25℃ 100 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC3212 2SC3212A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V 100 μA 100 μA 2SC3212 ICBO Collector cut-off current 2SC3212A CONDITIONS MIN MAX 500 UNIT V VCB=800V; IE=0 VCB=900V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT TYP. 3.5 MHz Switching times ton tstg tf 2SC3212 1.0 2SC3212A 1.2 μs Turn-on time IC=5A; VCC=200V IB1=-IB2=1A Storage time 2.5 2SC3212 1.0 2SC3212A 1.2 μs μs Fall time 2 JMnic Product Specification 2SC3212 2SC3212A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3