JMNIC 2SB1194

JMnic
Product Specification
2SB1194
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High DC current gain
・High speed switching
・DARLINGTON
・Complement to type 2SD1633
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector -emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
ICM
Collector current-peak
-8
A
IB
Base current
-0.5
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1194
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=-0.2A; RBE=∞
Collector-emitter saturation voltage
IC=-3A ;IB=-3mA
-1.5
V
Base-emitter saturation voltage
IC=-3A ;IB=-3mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-100V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-5
mA
hFE
DC current gain
IC=-3A ; VCE=-3V
VCEO(SUS)
VCEsat
VBEsat
-100
1500
V
10000
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-3A ;IB1=-IB2=-3mA
VCC=-50V
Fall time
hFE Classifications
Q
P
1500-6000
4000-10000
2
3.0
μs
5.0
μs
3.0
μs
JMnic
Product Specification
2SB1194
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3