JMnic Product Specification 2SC3157 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High switching speed ・Low collector saturation voltage ・Complement to type 2SA1261 APPLICATIONS ・For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 3.5 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC3157 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) TYP. MAX UNIT Collector-emitter sustaining voltage IC=5A ;IB1=0.5A;L=1mH 100 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 0.01 mA ICEX Collector cut-off current VCE=100V; VBE=1.5V Ta=125℃ 0.01 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.01 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 hFE-3 DC current gain IC=5A ; VCE=5V 20 V 200 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;IB1=-IB2=0.5A , RL=10Ω;VCC≈50V hFE-2 classifications M L K 40-80 60-120 100-200 2 0.5 μs 1.5 μs 0.5 μs JMnic Product Specification 2SC3157 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3