JMNIC 2SC3157

JMnic
Product Specification
2SC3157
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High switching speed
・Low collector saturation voltage
・Complement to type 2SA1261
APPLICATIONS
・For high voltage ,high speed and
power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-Peak
20
A
IB
Base current
3.5
A
PT
Total power dissipation
Ta=25℃
1.5
TC=25℃
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SC3157
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=5A ;IB1=0.5A;L=1mH
100
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.01
mA
ICEX
Collector cut-off current
VCE=100V; VBE=1.5V
Ta=125℃
0.01
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.01
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
40
hFE-3
DC current gain
IC=5A ; VCE=5V
20
V
200
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;IB1=-IB2=0.5A ,
RL=10Ω;VCC≈50V
hFE-2 classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
1.5
μs
0.5
μs
JMnic
Product Specification
2SC3157
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3