JMNIC 2SC3658

JMnic
Product Specification
2SC3658
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
・Built-in damper diode
APPLICATIONS
・For color TV horizontal deflection output
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1500
V
6
V
IC
Collector current
5
A
ICM
Collector current-peak
6
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
JMnic
Product Specification
2SC3658
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=5A; IB=1.25A
2.0
V
Base-emitter saturation voltage
IC=5A; IB=1.25A
1.5
V
ICBO
Collector cut-off current
VCB=1200V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
500
mA
hFE
DC current gain
IC=1A ; VCE=5V
VECF
Diode forward voltage
IF=6A
2.0
V
Fall time
IC=5A ; IB1=1A;IB2=-2.5A;LB=0
0.5
μs
tf
CONDITIONS
2
MIN
TYP.
8
JMnic
Product Specification
2SC3658
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3