JMnic Product Specification 2SC3658 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Built-in damper diode APPLICATIONS ・For color TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 6 V IC Collector current 5 A ICM Collector current-peak 6 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ TC=25℃ JMnic Product Specification 2SC3658 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A; IB=1.25A 2.0 V Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 500 mA hFE DC current gain IC=1A ; VCE=5V VECF Diode forward voltage IF=6A 2.0 V Fall time IC=5A ; IB1=1A;IB2=-2.5A;LB=0 0.5 μs tf CONDITIONS 2 MIN TYP. 8 JMnic Product Specification 2SC3658 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3