JMNIC 2SC4531

Product Specification
www.jmnic.com
2SC4531
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High speed
・High voltage
・Low saturation voltage
・Bult-in damper type
APPLICATIONS
・Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-Peak
20
A
IB
Base current
5
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC4531
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5
UNIT
VEBO
Emitter-base breakdown voltage
IE=200mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=1.7A
5
V
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.7A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
66
200
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
210
VF
Forward voltage(damper diode)
IF=7A
1.5
fT
Transition frequency
IE=0.1A ; VCE=10V
1
V
100
pF
1.8
3
V
MHz
Switching times inductive load
ts
Storage time
tf
Fall time
ICP=7A;IB1 =1.4A
IB2 =-2.8A
LY=110μH;CY=19000pF
JMnic
4
6
μs
0.2
0.5
μs
Product Specification
www.jmnic.com
2SC4531
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
JMnic
Product Specification
www.jmnic.com
2SC4531
Silicon NPN Power Transistors
JMnic