JMNIC 2SC4336

JMnic
Product Specification
2SC4336
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220Fa package
・Fast switching speed
・Low collector saturation voltage
APPLICATIONS
・For use in switching power supplies ,DC/DC
converters,motor drivers,solenoid drivers,etc
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
10
A
ICM
Collector current-Peak
20
A
IB
Base current(DC)
6
A
PT
Total power dissipation
TC=25℃
30
Ta=25℃
2
w
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SC4336
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=5.0A , IB=0.6A;L=1mH
VCEsat-1
Collector-emitter saturation voltage
IC=6A ;IB=0.3A
0.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A ;IB=0.4A
0.5
V
VBEsat-1
Base-emitter saturation voltage
IC=6A ;IB=0.3A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=8A ;IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
ICEX
Collector cut-off current
VCE=100V; VBE(off)=-1.5V
Ta=125℃
10
1.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=2V
100
hFE-2
DC current gain
IC=2A ; VCE=2V
100
hFE-3
DC current gain
IC=6A ; VCE=2V
60
COB
Collector capacitance
IE=0; VCB=10V; f=1MHz
120
pF
fT
Transition frequency
IC=0.5A; VCE=10V
150
MHz
100
UNIT
V
400
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
‹
IC=6A ;IB1=-IB2=0.3A
VCC≈50V;RL=8.3Ω
hFE-2 Classifications
M
L
N
100-200
150-300
200-400
2
0.3
μs
1.5
μs
0.3
μs
JMnic
Product Specification
2SC4336
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3