JMnic Product Specification 2SC5124 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Display horizontal deflection output ・Switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC5124 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ VCEsat Collector-emitter saturation voltage IC=8A;IB=2A 5 V VBEsat Base-emitter saturation voltage IC=8A;IB=2A 1.5 V ICBO1 Collector cut-off current VCB=1200V; IE=0 100 μA ICBO2 Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=8A ; VCE=5V 4 fT Transition frequency IE=-1A ; VCE=12V 3 MHz COB Output capacitance VCB=10V;f=1MHz 130 pF 0.1 μs 4.0 μs 0.2 μs 800 UNIT V 9 Switching times ton Turn-on time tstg Storage time tf IC=6A;IB1=1.2A; IB2-=-2.4A RL=33.3Ω;VCC=200V Fall time 2 JMnic Product Specification 2SC5124 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC5124 Silicon NPN Power Transistors 4