JMnic Product Specification 2SC4153 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Switching transistor APPLICATIONS ・For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 7 A ICM Collector current-peak 14 A IB Base current (DC) 3 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC4153 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.2 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=8V; IC=0 0.1 mA hFE-1 DC current gain IC=0.6A ; VCE=4V 70 250 hFE-2 DC current gain IC=3A ; VCE=4V 70 220 Transition frequency IE=-0.5A ; VCE=12V 30 MHz Collector output capacitance f=1MHz;VCB=10V 110 pF fT COB CONDITIONS MIN TYP. MAX 120 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=3A IB1=0.3A ,IB2=-0.6A VCC=50V, RL=16.7Ω 2 0.5 μs 3.0 μs 0.5 μs JMnic Product Specification 2SC4153 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SC4153 Silicon NPN Power Transistors 4