JMnic Product Specification 2SC4706 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 14 A ICM Collector current-peak 28 A IB Base current 7 A PC Collector power dissipation 130 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC4706 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=7A ; VCE=4V VCE(sat) Collector-emitter saturation voltage IC=7A ; IB=1.4A 0.5 V VBE(sat) Base-emitter saturation voltage IC=7A ; IB=1.4A 1.2 V Transition frequency VCE=12V;IE=-1.5A 6 MHz Collector output capacitance VCB=10V;f=1MHz 160 pF fT COB CONDITIONS MIN TYP. MAX 600 UNIT V 10 25 Switching times ton Turn-on time ts Storage time tf Fall time IC=7A;RL=35.7Ω IB1=1.05A;IB2=-3.5A VCC=250V 2 1.0 μs 5.0 μs 0.7 μs JMnic Product Specification 2SC4706 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SC4706 Silicon NPN Power Transistors 4