JMnic Product Specification 2SC3679 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current -peak 10 A IB Base current (DC) 2.5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3679 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V 6 MHz Collector output capacitance f=1MHz;VCB=10V 75 pF fT COB CONDITIONS MIN TYP. MAX 800 UNIT V 10 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A IB1=0.3A ,IB2=-1A VCC=250V, RL=125Ω 2 1.0 μs 5.0 μs 1.0 μs JMnic Product Specification 2SC3679 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimentions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC3679 Silicon NPN Power Transistors 4