JMNIC 2SC3679

JMnic
Product Specification
2SC3679
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage switching transistor
APPLICATIONS
・For switching regulator and
general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
5
A
ICM
Collector current -peak
10
A
IB
Base current (DC)
2.5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC3679
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=2A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
6
MHz
Collector output capacitance
f=1MHz;VCB=10V
75
pF
fT
COB
CONDITIONS
MIN
TYP.
MAX
800
UNIT
V
10
30
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A
IB1=0.3A ,IB2=-1A
VCC=250V, RL=125Ω
2
1.0
μs
5.0
μs
1.0
μs
JMnic
Product Specification
2SC3679
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimentions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SC3679
Silicon NPN Power Transistors
4