SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-130V, VCEO=-120V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=-100nA(Max.) @VCB=-100V Low Saturation Voltage P J MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C Low Noise : NF=8dB (Max.) P N : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA DIM A B C D E G H J K L M N P 1. EMITTER MAXIMUM RATING (Ta=25 CHARACTERISTIC ) 2. BASE SYMBOL RATING UNIT Collector-Base Voltage VCBO -130 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Base Current IB -100 mA PC * 350 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range Note : * Package Mounted On 99.5% Alumina 10 8 1999. 11. 30 Revision No : 2 3. COLLECTOR SOT-23 Marking Lot No. 0.6 ) Type Name ZN 1/2 2N5400S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current IEBO Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter * Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter * * Saturation Voltage Base-Emitter Saturation Voltage * TEST CONDITION MIN. TYP. MAX. UNIT VCB=-100V, IE=0 - - -100 nA VCB=-100V, IE=0, Ta=100 - - -100 A VEB=-3V, IC=0 - - -50 nA V(BR)CBO IC=-0.1mA, IE=0 -130 - - V V(BR)CEO IC=-1mA, IB=0 -120 - - V V(BR)EBO IE=-10 A, IC=0 -5 - - V hFE(1) VCE=-5V, IC=-1mA 30 - - hFE(2) VCE=-5V, IC=-10mA 40 - 180 hFE(3) VCE=-5V, IC=-50mA 40 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.2 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.5 VBE(sat)1 IC=-10mA, IB=-1mA - - -1.0 VBE(sat)2 IC=-50mA, IB=-5mA - - -1.0 100 - 400 MHz - - 6 pF 30 - 200 - - 8 fT Transition Frequency VCE=-10V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Small-Signal Current Gain hfe VCE=-10V, IC=-1mA, f=1kHz Noise Figure NF VCE=-5V, IC=-250 A Rg=1k V V dB , f=10Hz 15.7kHz * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1999. 11. 30 Revision No : 2 2/2