SEMICONDUCTOR MPSA94 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES B C ・High Breakdown Voltage. A ・Complementary to MPSA44. N E K MAXIMUM RATING (Ta=25℃) CHARACTERISTIC G J D SYMBOL RATING UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -6 V Collector Current IC -300 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ H Storage Temperature Range F 2 3 C 1 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-100μA, IE=0 -400 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -400 - - V Collector-Emitter Breakdown Voltage V(BR)CES IC=-100μA, IB=0 -400 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10μA, IC=0 -6.0 - - V Collector Cut off Current ICBO VCB=-300V, IE=0 - - -100 nA Collector Cut off Current ICES VCE=-400V, IB=0 - - -1 μA Emitter Cutoff Current IEBO VEB=-4V, IC=0 - - -100 nA VCE=-10V, IC=-1mA 40 - - VCE=-10V, IC=-10mA 50 - 300 VCE=-10V, IC=-50mA 45 - - VCE=-10V, IC=-100mA 40 - - DC Current Gain hFE * Collector-Emitter Saturation Voltage * VCE(sat) IC=-10mA, IB=-1mA - - -0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=-10mA, IB=-1mA - - -0.75 V VCB=-20V, IE=0, f=1MHz - 7 - pF Collector Output Capacitance Cob *Pulse Test : Pulse Width≦300μS, Duty Cycle≦2% 2002. 5. 28 Revision No : 1 1/2 MPSA94 IC V CE =-10V 300 100 30 10 3 1 SATURATION VOLTAGE VCE(sat) (V) -1 -3 -10 -30 -100 -300 -1k -1 -0.3 -0.1 -0.03 -0.01 -1 -3 -10 -30 -100 -300 VCE(sat) - I C C ob - V CB I C =10I B -3 -1 -0.3 -0.1 -0.03 -0.01 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 2002. 5. 28 IC =10I B -3 COLLECTOR CURRENT I C (mA) -10 -1 -10 COLLECTOR CURRENT I C (mA) Revision No : 1 -1k COLLECTOR OUTPUT CAPACITANCE C ob(pF) DC CURRENT GAIN h FE 1k VCE(sat) - I C SATURATION VOLTAGE VCE(sat) (V) h FE - 1k -1k f=1MHz I E =0 300 100 30 10 3 1 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR BASE VOLTAGE V CB (V) 2/2