KEC KDR735T

SEMICONDUCTOR
KDR735T
TECHNICAL DATA
SCHOTTKY BARRIER TYPE DIODE
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
E
B
FEATURES
1
DIM MILLIMETERS
_ 0.2
A
2.9 +
4
Low Reverse Current : IR=0.1 A(Typ.)
B
High Reliability.
D
_ 0.1
0.4 +
E
F
G
H
I
J
K
2.8+0.2/-0.3
_ 0.2
1.9 +
_ 0.05
0.16 +
F
A
Small Package : TSQ.
3
)
G
H
RATING
UNIT
Reverse Voltage
VR
30
V
Average Forward Current
IO*
200
mA
Surge Current (10ms)
IFSM*
1
A
Power Dissipation
PD**
900
mW
Tj
125
Tstg
-40 125
Junction Temperature
Storage Temperature Range
* Unit rating. (Total rating = Unit rating
I
SYMBOL
I
CHARACTERISTIC
0.00-0.10
0.25+0.3/-0.15
_ 0.1
0.60 +
_ 0.1
0.55 +
K
C
D
2
MAXIMUM RATING (Ta=25
1.6+0.2/-0.1
_ 0.05
0.70 +
C
4
1. D1 ANODE
2. D2 ANODE
3. D2 CATHODE
4. D1 CATHODE
3
D1
D2
1
2
TSQ
1.5)
** Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Lot No.
Marking
3
4
Type Name
R3
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
2
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF=200mA
-
-
0.60
V
Reverse Current
IR
VR=10V
-
-
1.0
A
2006. 2. 15
Revision No : 0
1/2
KDR735T
I R - VR
I F - VF
1m
REVERSE CURRENT I R (A)
100m
Ta
100µ
=-2
5
1m
C
10m
Ta
=1
25
Ta
C
=7
5
Ta
C
=2
5
C
FORWARD CURRENT I F (A)
1
10µ
Ta=125 C
100µ
10µ
Ta=75 C
1µ
Ta=25 C
100n
Ta=-25 C
1µ
10n
0
0.1
0.2
0.3
0.4
0.5
0.6
0
0.7
10
FORWARD VOLTAGE VF (V)
P - Ta
240
100
f=1MHz
Ta=25 C
POWER DISSIPATION P (mW)
TOTAL CAPACITANCE CT (pF)
30
REVERSE VOLTAGE VR (V)
C T - VR
10
1
Mounted on a glass
epoxy circuit board
of 20 20mm, pad
dimension 4 4mm.
200
160
120
80
40
0
0
10
20
REVERSE VOLTAGE VR (V)
2006. 2. 15
20
Revision No : 0
30
-40
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2/2