SEMICONDUCTOR KDR582E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE Low reverse current, low capacitance. Small package : ESC. E C 1 A FEATURES B CATHODE MARK FOR HIGH SPEED SWITCHING. 2 D F MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR 4 V Reverse Voltage VR 4 V Forward Current IF 130 mA PD* 150 mW Tj 150 Tstg -55 150 Power Dissipation Junction Temperature Storage Temperature Range * Mounted on a glass epoxy circuit board of 20 20 DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC , Pad Dimension of 4 4 Marking Type Name S4 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL VF Forward Voltage IR Reverse Current TEST CONDITION MIN. TYP. MAX. IF=0.1mA 0.2 - 0.35 IF=1mA 0.25 - 0.45 IF=10mA 0.35 - 0.6 VR=3V - - 0.25 VR=3V, TA=60 - - 1.25 Total Capacitance CT VR=0V, f=1MHz 0.4 - 0.75 Series Resistance rS IF=5mA, f=10kHz - - 15 2006. 11. 23 Revision No : 0 UNIT V A pF 1/2 KDR582E CT - VR IR - VR 103 f=1MHz Reverse Current IR (µA) Total Capacitance CT (pF) 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 102 101 100 Ta=25 C 0 2 4 6 8 10 Reverse Current VR (V) Reverse Voltage VR (V) V F - IF 100 Forward Current IF (mA) f=1MHz 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 Forward Voltage VF (V) 2006. 11. 23 Revision No : 0 2/2