KEC KDS120V

SEMICONDUCTOR
KDS120V
TECHNICAL DATA
SILICON EPITAXIAL TYPE DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
E
ᴌVery Small Package
: VSM.
ᴌLow Forward Voltage
: VF=0.92V (Typ.).
B
ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.).
G
D
2
: CT=2.2pF (Typ.).
1
3
K
H
A
ᴌSmall Total Capacitance
MAXIMUM RATING (Ta=25ᴱ)
SYMBOL
RATING
UNIT
VRM
85
V
Reverse Voltage
VR
80
V
Maximum (Peak) Forward Current
IFM
300 *
mA
Average Forward Current
IO
100 *
mA
IFSM
2*
A
Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
ᴱ
Tstg
-55ᴕ150
ᴱ
Surge Current (10ms)
Storage Temperature Range
J
Maximum (Peak) Reverse Voltage
P
C
CHARACTERISTIC
P
DIM MILLIMETERS
_ 0.05
A
1.2 +
_ 0.05
B
0.8 +
_ 0.05
C
0.5 +
_ 0.05
D
0.3 +
_ 0.05
E
1.2 +
_ 0.05
0.8 +
G
0.40
H
_ 0.05
0.12 +
J
_ 0.05
K
0.2 +
P
5
3
1. CATHODE 1
2. CATHODE 2
3. ANODE
2
1
VSM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
A3
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
VF(1)
IF=1mA
-
0.61
-
VF(2)
IF=10mA
-
0.74
-
VF(3)
IF=100mA
-
0.92
1.20
UNIT
V
Reverse Current
IR
VR=80V
-
-
0.5
Ọ
A
Total Capacitance
CT
VR=0, f=1MHz
-
2.2
4.0
pF
Reverse Recovery Time
trr
IF=10mA
-
1.6
4.0
nS
2001. 7. 24
Revision No : 0
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