SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ᴌVery Small Package : VSM. ᴌLow Forward Voltage : VF=0.92V (Typ.). B ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.). G D 2 : CT=2.2pF (Typ.). 1 3 K H A ᴌSmall Total Capacitance MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 100 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Surge Current (10ms) Storage Temperature Range J Maximum (Peak) Reverse Voltage P C CHARACTERISTIC P DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 D 0.3 + _ 0.05 E 1.2 + _ 0.05 0.8 + G 0.40 H _ 0.05 0.12 + J _ 0.05 K 0.2 + P 5 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 VSM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking A3 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.61 - VF(2) IF=10mA - 0.74 - VF(3) IF=100mA - 0.92 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 Ọ A Total Capacitance CT VR=0, f=1MHz - 2.2 4.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2001. 7. 24 Revision No : 0 1/1