KEC KDS160E_03

SEMICONDUCTOR
KDS160E
TECHNICAL DATA
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Fast Reverse Recovery Time.
Small Total capacitance.
1
A
Low Forward Voltage.
E
C
B
CATHODE MARK
Small Package : ESC.
2
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
F
)
SYMBOL
RATING
UNIT
VRM
85
V
Reverse Voltage
VR
80
V
Maximum (Peak) Forward Current
IFM
300
mA
Average Forward Current
IO
100
mA
Surge Current (10mS)
IFSM
2
A
Power Dissipation
PD*
150
mW
Tj
150
Tstg
-55 150
Maximum (Peak) Reverse Voltage
Junction Temperature
Storage Temperature Range
DIM
A
B
C
D
E
F
1. ANODE
2. CATHODE
MILLIMETERS
_ 0.10
1.60 +
_ 0.10
1.20 +
_ 0.10
0.80 +
_ 0.05
0.30 +
_ 0.10
0.60 +
_ 0.05
0.13 +
ESC
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Forward Voltage
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
VF(1)
IF=1mA
-
0.60
-
VF(2)
IF=10mA
-
0.72
-
VF(3)
IF=100mA
-
0.90
1.20
UNIT
V
Reverse Current
IR
VR=80V
-
-
0.5
A
Total Capacitance
CT
VR=0V, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
trr
IF=10mA
-
1.6
4.0
nS
2003. 11. 20
Revision No : 4
1/2
KDS160E
I F - VF
10
REVERSE CURRENT I R (µA)
10
FORWARD CURRENT I F (mA)
I R - VR
3
2
10
Ta
=
10
0
C
Ta
=2
Ta 5 C
=-2
5
C
10
1
10
10
-1
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta=100 C
1
Ta=75 C
10
-1
10
-2
10
-3
Ta=50 C
Ta=25 C
0
20
40
t rr
TOTAL CAPACITANCE CT (pF)
REVERSE RECOVERY TIME t rr (ns)
C T - VR
f=1MHz
Ta=25 C
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
80
REVERSE VOLTAGE VR (V)
FORWARD VOLTAGE V F (V)
2.0
60
30
100
- IF
100
Ta=25 C
Fig. 1
50
30
10
5
3
1
0.5
0.1
0.3
1
3
10
30
100
FORWARD CURRENT I F (mA)
REVERSE VOLTAGE VR (R)
Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT
INPUT
WAVEFORM
INPUT
0.01µF
DUT
WAVEFORM
50Ω
-6V
2kΩ
50Ω
0
OUTPUT
SAMPLING
OSCILLOSCOPE
(RIN =50Ω)
I F =10mA
0
0.1 I R
IR
50ns
E
t rr
PULSE GENERATOR
(R OUT =50Ω)
2003. 11. 20
Revision No : 4
2/2