SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast Reverse Recovery Time. Small Total capacitance. 1 A Low Forward Voltage. E C B CATHODE MARK Small Package : ESC. 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC F ) SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD* 150 mW Tj 150 Tstg -55 150 Maximum (Peak) Reverse Voltage Junction Temperature Storage Temperature Range DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Marking Type Name UF ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2003. 11. 20 Revision No : 4 1/2 KDS160E I F - VF 10 REVERSE CURRENT I R (µA) 10 FORWARD CURRENT I F (mA) I R - VR 3 2 10 Ta = 10 0 C Ta =2 Ta 5 C =-2 5 C 10 1 10 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 Ta=75 C 10 -1 10 -2 10 -3 Ta=50 C Ta=25 C 0 20 40 t rr TOTAL CAPACITANCE CT (pF) REVERSE RECOVERY TIME t rr (ns) C T - VR f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) 2.0 60 30 100 - IF 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (R) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2003. 11. 20 Revision No : 4 2/2