SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V (Typ.). : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 V Continuous Forward Current IF 150 mA IFSM 2 A Surge Current (10ms) 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H 0.50 J _ 0.05 0.13 + 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 Power Dissipation PD 200 * Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range C D E G J C MAXIMUM RATING (Ta=25℃) 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G H : CT=2.2pF (Typ.). CHARACTERISTIC D 2 A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance 1 mW ESM Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm) Marking H1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.61 - VF(2) IF=10mA - 0.74 - VF(3) IF=150mA - - 1.25 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - - 4.0 pF Reverse Recovery Time trr IF=10mA - - 4.0 ns 2009. 1. 23 Revision No : 1 1/2 BAW56T IR - V R IF - VF 101 REVERSE CURRENT IR (µA) FORWARD CURRENT IF (mA) 103 Ta =1 00 Ta C =2 5C 101 0 10 Ta =-2 5C 102 10-1 0 0.2 0.4 0.6 0.8 1.0 Ta=50 C 10-2 Ta=25 C -3 10 0 20 40 60 80 CT - V R trr - IF f=1MHz Ta=25 C 1.5 1.0 0.5 0.2 Ta=75 C 10-1 REVERSE VOLTAGE VR (V) 2.0 0 Ta=100 C FORWARD VOLTAGE VF (V) 2.5 TOTAL CAPACITANCE CT (pF) 1.2 REVERSE RECOVERY TIME trr (ns) 10 -2 100 10 1 100 100 Ta=25 C Fig. 1 10 1 0.1 REVERSE VOLTAGE VR (R) 1 10 100 FORWARD CURRENT IF (mA) Fig. 1. REVERSE RECOVERY TIME(trr) TEST CIRCUIT -6V 0.01µF DUT 50Ω INPUT 50Ω 0 2kΩ INPUT WAVEFORM 50ns OUTPUT SAMPLING OSCILLOSCOPE (RIN=50Ω) WAVEFORM IF =10mA 0 0.1 IR IR E trr PULSE GENERATOR (ROUT=50Ω) 2009. 1. 23 Revision No : 1 2/2