KEC BAW56

SEMICONDUCTOR
BAW56
TECHNICAL DATA
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
・Small Package : SOT-23.
E
B
L
L
・Low Forward Voltag : VF=0.92V(Typ.).
2
A
H
1
P
VRM
85
V
Reverse Voltage
VR
80
V
Continuous Forward Current
IF
250
mA
IFSM
2
A
Maximum (Peak) Reverse Voltage
Surge Current (10ms)
PD
Power Dissipation
Junction Temperature
Storage Temperature Range
J
UNIT
K
RATING
P
N
SYMBOL
C
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
3
G
・Small Total Capacitance : CT=2.2pF(Typ.).
D
・Fast Reverse Recovery Time : trr=1.6ns(Typ.).
DIM
A
MILLIMETERS
_ 0.20
2.93 +
B
C
1.30+0.20/-0.15
1.30 MAX
D
0.45+0.15/-0.05
E
G
2.40+0.30/-0.20
1.90
H
J
0.95
0.13+0.10/-0.05
K
0.00 ~ 0.10
L
0.55
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
M
3
1. CATHODE 1
2. CATHODE 2
3. ANODE
2
1
225*
mW
SOT-23
300**
Tj
150
℃
Tstg
-55～150
℃
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)
Marking
Lot No.
H6
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
VF(1)
IF=1mA
-
0.61
-
VF(2)
IF=10mA
-
0.74
-
VF(3)
IF=150mA
-
-
1.25
UNIT
V
Reverse Current
IR
VR=80V
-
-
0.5
μA
Total Capacitance
CT
VR=0, f=1MHz
-
-
4.0
pF
Reverse Recovery Time
trr
IF=10mA
-
-
4.0
nS
2009. 1. 23
Revision No : 1
1/2
BAW56
10
10
2
- VF
I R - VR
10
REVERSE CURRENT I R (µA)
FORWARD CURRENT I F (mA)
IF
3
10
10
5
Ta
C
=-2
5
C
1
Ta
=2
Ta
=1
00
C
10
-1
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta=100 C
1
Ta=75 C
10
-1
Ta=50 C
10
-2
Ta=25 C
10
-3
0
20
FORWARD VOLTAGE VF (V)
40
t rr REVERSE RECOVERY TIME t rr (ns)
TOTAL CAPACITANCE C T (pF)
2.5
f=1MHz
Ta=25 C
2.0
1.5
1.0
0.5
0.2
3
1
10
30
80
REVERSE VOLTAGE VR (V)
C T - VR
0
60
100
100
Ta=25 C
Fig. 1
50
30
10
5
3
1
0.5
0.1
200
IF
0.3
1
3
10
30
100
FORWARD CURRENT I F (mA)
REVERSE VOLTAGE VR (V)
Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT
INPUT
WAVEFORM
INPUT
0.01µF
DUT
WAVEFORM
50Ω
-6V
2kΩ
50Ω
0
OUTPUT
SAMPLING
OSCILLOSCOPE
(RIN =50Ω)
I F =10mA
0
0.1 I R
IR
50ns
E
t rr
PULSE GENERATOR
(R OUT =50Ω)
2009. 1. 23
Revision No : 1
2/2